FGP20N6S2 Allicdata Electronics

FGP20N6S2 Discrete Semiconductor Products

Allicdata Part #:

FGP20N6S2-ND

Manufacturer Part#:

FGP20N6S2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 28A 125W TO220AB
More Detail: IGBT 600V 28A 125W Through Hole TO-220AB
DataSheet: FGP20N6S2 datasheetFGP20N6S2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 125W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 390V, 7A, 25 Ohm, 15V
Td (on/off) @ 25°C: 7.7ns/87ns
Gate Charge: 30nC
Input Type: Standard
Switching Energy: 25µJ (on), 58µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Current - Collector Pulsed (Icm): 40A
Current - Collector (Ic) (Max): 28A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs, or insulated gate bipolar transistors, are three-terminal power semiconductor devices used in applications ranging from robots, inverters, solar power converters and server power supply systems. The FGP20N6S2 IGBT is a single-die power transistor ideal for applications that require high power levels and gate-controlled performance. In this article, the application field and working principle of FGP20N6S2 IGBT will be discussed in detail.

As one of the leading IGBT manufacturers, Fairchild Semiconductor is committed to providing superior products that meet the highest standards of performance, quality and reliability. The FGP20N6S2 IGBT is a single-die power transistor with a maximum on-state current of 20 amps and a maximum off-state voltage of 600 volts. The FGP20N6S2 is suitable for applications such as AC and DC power conversion, welding machines, solar inverters and household appliances.

The FGP20N6S2 IGBT has several advantages compared to other types of IGBTs. It offers high power dissipation capabilities and low on-resistance. It also has a fast switching speed and a high reproducibility of current drive for better reliability. Furthermore, it has a wide variety of package types to meet the requirements of virtually any application. For example, it is available in a standard TO-220 package, SOIC package and a standard thermal pad package.

In terms of working principle, the FGP20N6S2 IGBT works by controlling the flow of current through its gate terminal. When the gate voltage is below the threshold voltage, the device is off and no current flows. When the gate voltage is applie,d it creates a channel across the two terminals. This channel allows electrons to flow, thus turning the device on and allowing current to flow. The gate voltage is then able to control the magnitude of the current, allowing it to be varied depending on the application.

The FGP20N6S2 IGBT is an ideal choice for applications that require high power levels and gate-controlled performance. Its capacitance and gate switching characteristics make it suitable for high power levels applications such as welding machines, solar inverters and household appliances. With its high suppress voltage,it is also suitable for AC and DC power conversion. Finally, its wide variety of package types provides customers with the flexibility to choose the right package for their applications.

The specific data is subject to PDF, and the above content is for reference

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