FGP20N6S2D Allicdata Electronics

FGP20N6S2D Discrete Semiconductor Products

Allicdata Part #:

FGP20N6S2D-ND

Manufacturer Part#:

FGP20N6S2D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 28A 125W TO220AB
More Detail: IGBT 600V 28A 125W Through Hole TO-220AB
DataSheet: FGP20N6S2D datasheetFGP20N6S2D Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 125W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 31ns
Test Condition: 390V, 7A, 25 Ohm, 15V
Td (on/off) @ 25°C: 7.7ns/87ns
Gate Charge: 30nC
Input Type: Standard
Switching Energy: 25µJ (on), 58µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Current - Collector Pulsed (Icm): 40A
Current - Collector (Ic) (Max): 28A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The FGP20N6S2D is an insulated gate bipolar transistor (IGBT), commonly known as an IGBT module, and a single IGBT in the form of a discrete component. This type of IGBT is designed for high current, power applications, and is widely used in various applications due to its ability to handle high voltages while providing relatively low switching losses. In this article, we will discuss the application field and working principle of the FGP20N6S2D IGBT module.

Application Field

The FGP20N6S2D is ideal for use in a broad range of applications including motor drives, welding, uninterruptible power supplies (UPS), consumer appliances, solar and wind energy, and power factor correction (PFC). The high current and voltage handling capability of the FGP20N6S2D enable it to be used for high power electronic systems.For motor drives, the FGP20N6S2D enables reliable and efficient operation of the motor by providing high voltage and current control. The low switching losses of the FGP20N6S2D enable efficient motors with reduced heating. In welding applications, the FGP20N6S2D can be used to regulate the current of the welding machine, providing a more stable and accurate welding output.In UPS systems, the FGP20N6S2D IGBT module can be used to regulate the current and voltage to the load and ensure a consistent, uninterrupted power source. In consumer appliances, the FGP20N6S2D can be used to regulate the current and voltage to the appliance, thus ensuring the correct operation and reducing energy consumption. For solar and wind energy, the FGP20N6S2D can be used to regulate and manage the high power generated from renewable energy sources. The high current handling capability of the FGP20N6S2D allows for reliable operation of the system and reduces the need for additional components, such as batteries, that are often used in low power applications. Finally, the FGP20N6S2D can be used for power factor correction to reduce power loss and increase efficiency of the system.

Working Principle

The FGP20N6S2D is essentially an IGBT module comprised of two components, an insulated gate and a bipolar transistor. The insulated gate is composed of a gate contact, an isolated control electrode, a substrate and a gate oxide layer. This insulated gate is used to control the current and voltage being supplied to the load. The bipolar transistor is composed of an emitter, collector and base. This transistor is used to regulate and control the current passing through it.When the insulated gate is turned on, the gate contact is polarized, allowing the gate oxide layer to be in the conducting state. When the gate oxide layer is in the conducting state, electrons are allowed to flow between the control electrode and the substrate. This flow of electrons is called the gate-source voltage, and when it exceeds the threshold voltage of the bipolar transistor, the junction between the emitter and collector becomes forward-biased, allowing current to flow from the emitter to the collector.The current passing through the FGP20N6S2D is regulated by the voltage applied to the gate contact. When the voltage is increased at the gate contact, the gate oxide layer becomes more conductive, allowing more current to flow through the IGBT module. When the voltage is decreased at the gate contact, the gate oxide layer becomes less conductive, reducing the current flowing through the IGBT module.

Conclusion

The FGP20N6S2D is a single IGBT module designed for high current, power applications. It is widely used in a variety of applications, such as motor drives, welding, UPS systems, consumer appliances, solar and wind energy, and power factor correction. The FGP20N6S2D is composed of two components, an insulated gate and a bipolar transistor, and works by modulating the current and voltage being supplied to the load through the gate oxide layer.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FGP2" Included word is 15
Part Number Manufacturer Price Quantity Description
FGP20N6S2D ON Semicondu... 0.0 $ 1000 IGBT 600V 28A 125W TO220A...
FGP20N6S2 ON Semicondu... 0.0 $ 1000 IGBT 600V 28A 125W TO220A...
FGP20N60UFDTU ON Semicondu... 1.93 $ 1000 IGBT 600V 40A 165W TO220I...
FGP20B-E3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 2A DO...
FGP20BHE3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 2A DO...
FGP20C-E3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 150V 2A DO...
FGP20CHE3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 150V 2A DO...
FGP20D-E3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 2A DO...
FGP20DHE3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 2A DO...
FGP20B-E3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 2A DO...
FGP20BHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 2A DO...
FGP20C-E3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 150V 2A DO...
FGP20CHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 150V 2A DO...
FGP20DHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 2A DO...
FGP20D-E3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 2A DO...
Latest Products
IKW03N120H2FKSA1

IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...

IKW03N120H2FKSA1 Allicdata Electronics
AUXKNG4PH50S-215

IGBT 1200V TO247-3IGBT

AUXKNG4PH50S-215 Allicdata Electronics
AUIRG4PH50S-205

IGBT 1200V TO247-3IGBT 1200V 57A 200W T...

AUIRG4PH50S-205 Allicdata Electronics
AUXMIGP4063D

IGBT 600V TO-247 COPAKIGBT

AUXMIGP4063D Allicdata Electronics
FGD3N60LSDTM-T

INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...

FGD3N60LSDTM-T Allicdata Electronics
IXGM40N60AL

POWER MOSFET TO-3IGBT

IXGM40N60AL Allicdata Electronics