FGP30N6S2D Discrete Semiconductor Products

Power - Max:	167W
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	46ns
Test Condition:	390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C:	6ns/40ns
Gate Charge:	23nC
Input Type:	Standard
Switching Energy:	55µJ (on), 100µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 12A
Current - Collector Pulsed (Icm):	108A
Current - Collector (Ic) (Max):	45A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The FGP30N6S2D is a single insulated gate bipolar transistor (IGBT), a type of three-terminal power semiconductor device. It is used in a wide range of applications, from motor control to the manufacture of power supplies and high frequency autonomous control systems. In addition to its wide range of applications, this type of transistor is capable of working at a high frequency, generally around 200 kHz. This article will provide an overview of the main features of the FGP30N6S2D, as well as its application fields and working principle.

Overview and Features

The FGP30N6S2D is a single-stage power IGBT, meaning that it is comprised of two separate semiconductor structures. The use of two structures, in tandem with one another, allows for improved power handling capabilities compared to traditional transistors. The IGBT is a voltage-controlled device, meaning that the base-emitter voltage is used to control the conductivity of the device. It is also an integrated junction device, meaning that the junctions of the device are integrated together, providing a unified, continuous structure. The FGP30N6S2D is rated at 30 amps and 600volts, making it suitable for applications ranging from motor control to power supplies and autonomous high frequency control systems. The device operates at a frequency of up to 200 kHz, allowing for increased efficiency and improved response time. Additionally, the device features a low on-state voltage drop for improved power handling capabilities. The device also features a low gate-emitter voltage and low total power loss.

Application Field and Working Principle

The FGP30N6S2D is suitable for a wide range of applications, from motor control to the manufacture of power supplies and high frequency autonomous control systems. In motor control applications, the IGBT is used to efficiently control AC motors, with the ability to quickly turn the motor on and off.The IGBT works using the principle of voltage control. A voltage is applied to the IGBT\'s gate-emitter junction, which controls the device\'s conductivity. When a positive voltage is applied to the gate-emitter junction, the N-type material conducts by allowing electrons to flow from the emitter to the collector. When a negative voltage is applied to the gate-emitter junction, the N-type material is reversed biased, blocking current flow between the collector and emitter. The IGBT also features a low on-state voltage drop, which allows for more efficient operation of the device.

Conclusion

The FGP30N6S2D is a single insulated gate bipolar transistor (IGBT) that is suitable for a wide range of applications, from motor control to the manufacture of power supplies and high frequency autonomous control systems. The device is voltage-controlled and integrates two integrated junction structures. It is rated at 30 amps and 600 volts, and is capable of working at a frequency of up to 200 kHz. The device also features a low on-state voltage drop and gate-emitter forward voltage for improved power handling capabilities. Working on the principle of voltage control, the IGBT is used to efficiently control AC motors, with the ability to quickly turn the motor on and off.

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