Allicdata Part #: | FII30-06D-ND |
Manufacturer Part#: |
FII30-06D |
Price: | $ 6.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT PHASE LEG ISOPLUS I4-PAC-5 |
More Detail: | IGBT Array NPT Half Bridge 600V 30A 100W Through H... |
DataSheet: | FII30-06D Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 6.35141 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 30A |
Power - Max: | 100W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 20A |
Current - Collector Cutoff (Max): | 600µA |
Input Capacitance (Cies) @ Vce: | 1.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | i4-Pac™-5 |
Supplier Device Package: | ISOPLUS i4-PAC™ |
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The FII30-06D is a IGBT module from the F-series family of IGBT Arrays from ON Semiconductor. It is a very versatile device, able to be used for a number of applications. It utilizes a Direct Bond Copper technology for high power switching and short circuit protection, allowing this device to be used for a variety of solutions. The FII30-06D is a suitable device for applications in power electronics, motor control, automotive, industrial, and communications.
The FII30-06D is a four-pack IGBT array, consisting of three IGBTs and one diode. The operation of the device uses an insulated gate structure and performs by using insulated gate bipolar transistors (IGBT) in an array format using Gate-Emitter Voltage control. The IGBTs form the main components of a power switch, acting as switch to control the flow of current across the elements. This current flow is controlled by the voltage between the gate and emitter of the transistor, thus allowing the device to switch quickly and accurately.
The IGBT array features a low voltage drop combined with high dV/dt performance, making it well suited for motor control in automotive and industrial applications. This device also has a soft turn-on and current limiting capabilities, giving it extended lifetime over time. It can also handle high temperatures up to 200°C. In addition, the FII30-06D utilizes gate protection, reducing gate ringing for improved system noise and lowering gate resistances for improved switching time.
The FII30-06D has several features to prevent overcurrent and short circuit conditions, making it suitable for a wide range of applications including Home Appliances, Uninterruptable Power Supplies, UPS Systems, Inverters, and Motor Controls. The FII30-06D also offers high level of inductive load operation, making it ideal for power supplies and bridge rectifier circuits.
The FII30-06D is a very efficient device and is designed to meet the demanding requirements of high power switching applications. It offers a high current rating and a fast operating speed in order to deliver high performance. It also has very low switching losses to minimize energy usage. The FII30-06D is a reliable device and is widely used in many applications.
Overall, the FII30-06D is a great device from the F-Series family of IGBT Array from ON Semiconductor. Its many features combined with its small size make it an excellent choice for high power applications. With its wide range of features and abilities, the FII30-06D provides the best performance for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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