FJA3835TU

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The FJA3835TU is a high-voltage and high-speed NPN transistor in the Single Bipolar (BJT) category. It has gained traction in various application fields due to its high frequency performance and efficient operation. As a result, it has become an excellent choice for power switching applications, such as high voltage amplifiers, switching circuits, and power supplies.

The FJA3835TU is a 100V, 0.5A, 25 W transistor designed for high-voltage, high-frequency applications. It has a fast switching time of up to 10 ns, making it suitable for applications requiring high-speed switching. Additionally, its high-voltage capabilities enable it to operate at a high breakdown voltage, with an allowable power dissipation of up to twenty-five watts at its rated voltage of 100V. Moreover, the FJA3835TU features a low-saturation voltage of 50mV at a collector current of 200mA, with a low turn-on voltage of 1.2V.

The FJA3835TU\'s working principle is based on the bipolar junction transistor (BJT). It works by using a large electric current to control the flow of a smaller current through the transistor. This is done by controlling the current at the base (B) lead, which is then amplified at the collector (C) lead. This is why a BJT is often described as a current-controlled current amplifier, as the current at the B lead is used to control the current at the C lead.

The transistor can be further classified into two categories: NPN and PNP. The FJA3835TU is an NPN transistor, wherein the majority current carriers are negatively charged electrons. Meanwhile, PNP transistors are those with the majority current carriers being positively charged holes. As an NPN transistor, the FJA3835TU uses its emitter (E) lead to inject minority-carrier electrons into the base. As the base voltage increases, more electrons can enter the base, causing the current to increase in the collector circuit.

In summary, the FJA3835TU is a high-voltage and high-speed NPN transistor in the Single Bipolar (BJT) category. It has a fast switching time and a high breakdown voltage, making it suitable for various power switching applications. It operates using the bipolar junction transistor working principle, wherein an electric current is used to control the flow of a smaller current through the transistor. This is achieved by controlling the current at the base (B) lead, which is then amplified at the collector (C) lead.

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