FJA4213RTU Allicdata Electronics
Allicdata Part #:

FJA4213RTU-ND

Manufacturer Part#:

FJA4213RTU

Price: $ 1.81
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 250V 17A TO-3PN
More Detail: Bipolar (BJT) Transistor PNP 250V 17A 30MHz 130W T...
DataSheet: FJA4213RTU datasheetFJA4213RTU Datasheet/PDF
Quantity: 335
1 +: $ 1.64430
10 +: $ 1.47798
100 +: $ 1.18818
500 +: $ 0.97622
1000 +: $ 0.80887
Stock 335Can Ship Immediately
$ 1.81
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 17A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Power - Max: 130W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Description

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FJA4213RTU is a prodigiously popular single bipolar NPN transistor, which is commonly used in several applications. Generally, it is used in current or voltage regulator circuits, digital and analog switching circuits, relay or solenoid driver circuits, and high-speed switching circuits. It is specially designed to meet the requirements of commercial, industrial, and complex equipment.

FJA4213RTU is made using a wide, planar dielectric process which makes them ideally suitable for high-voltage, high-current switching applications. Its characteristics include a breakdown voltage of 300V, a rated VCE (collector-emitter voltage) of 40V, a current gain hFE of 40 to 100, and a maximum collector-emitter saturation voltage of 0.4V. Furthermore, the transistor’s housing temperature range ranges from -65C to +150C, its power dissipation is 625mW and its collector current of 800mA. The device is available packaged in an industry-standard TO-92.

The basic operation of FJA4213RTU follows the common principles of a single NPN bipolar junction transistor. It is a three-terminal device comprising of an emitter, base and collector. When a small current is applied to the base terminal, it allows a much larger current to flow through the emitter-collector path, which is thus known as current amplification. By controlling the base current, the amount of current flowing through the emitter-collector path can be adjusted. In this way, FJA4213RTU is used to control and direct large currents, voltages and activate switches in various electrical systems and machines.

FJA4213RTU is widely used in amplifiers, detectors, switches and various other current, voltage and power-related circuits. In an amplifier circuit, it amplifies the input signal. In a detector circuit, it senses an external signal and activates an appropriate output device. It has also become popular in circuits requiring high-speed switching and in relay or solenoid driver circuits that require switching operations at high rates. Furthermore, FJA4213RTU can be used as a switch in digital logic circuits and in voltage or current regulating applications.

In applications such as circuit protection, the FJA4213RTU is used to prevent sudden currents or signals that could damage the circuit. It operates as a barrier and dims the input current or voltage, thus protecting the circuit from overloading. FJA4213RTU can also be used in electrochemical systems and as a switch in remotely activated controlling schemes.

To sum up, FJA4213RTU is a widely popular single NPN bipolar junction transistor used in a variety of applications like amplifiers, switches, detectors, and in current, voltage and power-related circuits. It is characterized by properties such as high breakdown voltage, wide temperature range and low saturation voltage. In addition its ease of use, wide availability and low cost make it an excellent choice for circuit applications.

The specific data is subject to PDF, and the above content is for reference

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