FJB5555TM Allicdata Electronics

FJB5555TM Discrete Semiconductor Products

Allicdata Part #:

FJB5555TMFSTR-ND

Manufacturer Part#:

FJB5555TM

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 5A D2PAK
More Detail: Bipolar (BJT) Transistor NPN 400V 5A 1.6W Surface...
DataSheet: FJB5555TM datasheetFJB5555TM Datasheet/PDF
Quantity: 2400
800 +: $ 0.54133
1600 +: $ 0.42736
2400 +: $ 0.39887
5600 +: $ 0.37988
Stock 2400Can Ship Immediately
$ 0.6
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 3V
Power - Max: 1.6W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Base Part Number: FJB5555
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The Field Effect Transistor (FET) is a three terminal semiconductor device and is known as the world’s smallest active electronic component. It is most commonly used in digital electronics where it can amplify signals, create logic gates and display information on a screen. FETs are classified into two types Grundig transistors and Surface-conduction transistors.

FJB5555TM is one such Field Effect Transistor that is specifically designed for high-speed switching and current handling applications. It is specifically a low-power bipolar device which is constructed from two P-type and N-type semiconductor layers. The operating voltage of this transistor is 7.0 V, the maximum collector current is 5.0 A and the maximum collector dissipation is 25 W which makes it a very reliable device for various power applications.

The working principle of FJB5555TM is the same as that of any other Field Effect Transistor. It consists of a source, a drain and a gate. The gate is the controlling element of the device, and it has the property of controlling the current through the device. When a signal is applied to the gate, it creates an electric field which draws the majority carriers towards the gate and allows them to pass through the channel between the source and drain.

The device can be used in various applications such as driver applications, switching, and high-power applications which require fast switching and high current handling. It can also be used in industrial and consumer electronic products, automotive and aviation electronic systems, and medical electronics. Furthermore, the device is extremely reliable and has a breakdown voltage of 6.0 V.

In conclusion, FJB5555TM is a versatile transistor that is specifically designed for high-speed switching and current handling applications. It can be used in a variety of applications ranging from driver circuits to switching, and high-power applications. It is a reliable device which has a maximum collector dissipation of 25 W and breakdown voltage of 6.0 V.

The specific data is subject to PDF, and the above content is for reference

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