FJB5555TM Discrete Semiconductor Products |
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Allicdata Part #: | FJB5555TMFSTR-ND |
Manufacturer Part#: |
FJB5555TM |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 5A D2PAK |
More Detail: | Bipolar (BJT) Transistor NPN 400V 5A 1.6W Surface... |
DataSheet: | FJB5555TM Datasheet/PDF |
Quantity: | 2400 |
800 +: | $ 0.54133 |
1600 +: | $ 0.42736 |
2400 +: | $ 0.39887 |
5600 +: | $ 0.37988 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1A, 3.5A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 800mA, 3V |
Power - Max: | 1.6W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Base Part Number: | FJB5555 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The Field Effect Transistor (FET) is a three terminal semiconductor device and is known as the world’s smallest active electronic component. It is most commonly used in digital electronics where it can amplify signals, create logic gates and display information on a screen. FETs are classified into two types Grundig transistors and Surface-conduction transistors.
FJB5555TM is one such Field Effect Transistor that is specifically designed for high-speed switching and current handling applications. It is specifically a low-power bipolar device which is constructed from two P-type and N-type semiconductor layers. The operating voltage of this transistor is 7.0 V, the maximum collector current is 5.0 A and the maximum collector dissipation is 25 W which makes it a very reliable device for various power applications.
The working principle of FJB5555TM is the same as that of any other Field Effect Transistor. It consists of a source, a drain and a gate. The gate is the controlling element of the device, and it has the property of controlling the current through the device. When a signal is applied to the gate, it creates an electric field which draws the majority carriers towards the gate and allows them to pass through the channel between the source and drain.
The device can be used in various applications such as driver applications, switching, and high-power applications which require fast switching and high current handling. It can also be used in industrial and consumer electronic products, automotive and aviation electronic systems, and medical electronics. Furthermore, the device is extremely reliable and has a breakdown voltage of 6.0 V.
In conclusion, FJB5555TM is a versatile transistor that is specifically designed for high-speed switching and current handling applications. It can be used in a variety of applications ranging from driver circuits to switching, and high-power applications. It is a reliable device which has a maximum collector dissipation of 25 W and breakdown voltage of 6.0 V.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FJB5555TM | ON Semicondu... | 0.6 $ | 2400 | TRANS NPN 400V 5A D2PAKBi... |
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