FJC690TF Allicdata Electronics
Allicdata Part #:

FJC690TF-ND

Manufacturer Part#:

FJC690TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 2A SOT-89
More Detail: Bipolar (BJT) Transistor NPN 45V 2A 500mW Surface...
DataSheet: FJC690TF datasheetFJC690TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

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FJC690TF Application Field and Working Principle
The FJC690TF is a Transistor from the Bipolar (BJT) family. It is a Single transistor and is used for a variety of applications. This article will take a look at the application field of the FJC690TF and the accompanying working principle.The FJC690TF is a bipolar junction transistor (BJT) which operates from 40 Volt DC to 45 Volt DC. It features double differential amplifier, low noise and high common-mode rejection ratio. This makes it suitable for use as an amplifier, switching and bias circuits. Thanks to its design, it is often used in audio amplifiers and low voltage applications.The FJC690TF transistor is also commonly used in high power applications such as power supplies, transformers and switching systems. It has a low on-resistance of 8 ohms and can dissipate up to 85 Watts. It is also used in signal processing applications due to its low voltage operation and wide dynamic range. In order to understand the working principle of the FJC690TF, we need to start by looking at the transistor structure. This transistor is comprised of three layers; Base, Emitter and Collector. The base is a P-type semiconductor, while the Emitter and Collector are both N-type semiconductors. When a positive voltage is applied to the base, electrons from the Emitter will enter the Base region, creating an electron current. This current then flows through the Base region to the Collector. Since the Base is a P-type semiconductor, the positively charged ions from the Base will attract the electrons from the Emitter, allowing them to flow through the transistor. This is known as the principle of operation of the FJC690TF. In order to amplify the signal, it is necessary to vary the amount of current flowing through the transistor by adjusting the Base-to-Emitter voltage. The FJC690TF can also be used as a switch. When the voltage applied to the Base is increased, the current through the transistor increases, allowing it to turn on. When the voltage is decreased, the current through the transistor decreases, turning off the switch.The FJC690TF is an ideal application for those who are seeking a high power, low voltage transistor for their application. With its low on-resistance and wide dynamic range, the FJC690TF can be used in a variety of applications. Its versatile design also allows it to be used as an amplifier, switch and bias circuit. Thanks to its ability to function as a switch, the FJC690TF can also be used in power supplies, transformers and switching systems. Finally, the FJC690TF is capable of operating from 40 Volt DC to 45 Volt DC, making it suitable for low voltage audio amplifier applications. In conclusion, the FJC690TF is a high power, low voltage transistor from the Bipolar (BJT) family. It is able to dissipate up to 85 Watts, and can amplify signals, operate as a switch, and provide bias circuits. It features double differential amplifier, low noise and high common-mode rejection ratio, making it suitable for use in audio amplifiers, power supplies, transformers and switching systems. With its versatile design, the FJC690TF is an ideal application for those seeking a high power, low voltage transistor.

The specific data is subject to PDF, and the above content is for reference

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