FJD3076TM Discrete Semiconductor Products

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The FJD3076TM is a NPN silicon Darlington transistor capable of high current gain and fast switching performance. It is manufactured in a TO-39 metal can package and features a low Forward Voltage Drop, low Off-State Leakage Current and low On-State Saturation Voltage for improved performance. The FJD3076TM is ideal for use in small signal and high-current applications such as small motor control, low voltage battery applications and general switching.

The FJD3076TM bipolar junction transistor (BJT) is a three-terminal device composed of two p-type semiconductor layers separated by a single n-type semiconductor layer. The two semiconductor layers are called the collector and emitter, while the third p-type layer is the base. A base current controls the collector-emitter current, allowing for a wide range of functionality. The FJD3076TM has an extraordinary current gain of up to 2000 with a low saturation voltage. This enables it to handle large currents efficiently without significant power losses.

The FJD3076TM operates by electron movement from the base to the collector. Negative electrons from the base region move to the collector region, driven by an external power supply. These electrons enter the collector region, and together with additional electrons from the emitter, form a current flow through the circuit. Because of this current flow, the collector voltage is reduced and the circuit is activated. The FJD3076TM has a high current gain, which allows it to accurately and precisely control the collector current even with minimal base current. This makes it well-suited to complex switching and motor control applications.

Due to its high current handling capabilities, the FJD3076TM is well-suited for powering small motors and other applications that require precise current control. The device can also be used in battery powered applications, where it can efficiently and accurately control current, extending battery life. Additionally, the FJD3076TM can be used for general switching applications that require high current gain and fast switching. With its low saturation voltage, the FJD3076TM can switch very quickly and accurately, enabling precise control and switching in demanding applications.

The FJD3076TM is a single BJT transistor that is capable of providing high current gain and low saturation voltage for precise current control. Its low Forward Voltage Drop, low Off-State Leakage Current and low On-State Saturation Voltage make it ideal for small signal and high-current applications such as motor control, low voltage battery applications and general switching. The device\'s fast switching speed, low power losses and precise current control make it an excellent choice for powering small motors and other applications that require accurate current control.

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