FJE3303TU Allicdata Electronics
Allicdata Part #:

FJE3303TU-ND

Manufacturer Part#:

FJE3303TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 1.5A TO126
More Detail: Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Th...
DataSheet: FJE3303TU datasheetFJE3303TU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Power - Max: 20W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: FJE3303
Description

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FJE3303TU Application Field and Working Principle

The FJE3303TU is a single bipolar transistor designed for many different applications. It is a field effect transistor (FET) with a NPN or PNP configuration, and uses standard CMOS technology. Its small size and relatively low cost make it an attractive choice for a wide variety of applications.

The FJE3303TU can be used in analog and digital circuits. It is capable of handling high frequency signals and is used in frequency programs, such as frequency synthesizers and oscillators. It is also used in the power supplies of computers, DVD players and other audio and video equipment.

The FJE3303TU is a voltage-dependent device, meaning that the current passing through it is dependent on the applied voltage. The current is controlled by a control gate, which is a metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET can be used to control the current passing through the transistor, so it can be used to regulate the voltage and current.

The FJE3303TU also has an internal protection circuit that limits the current through the transistor in case of an overcurrent. This circuit can be used to protect the device from excessive current.

Working Principle of FJE3303TU

The working principle of the FJE3303TU is based on the movement of minority carriers. Minority carriers are electrons or holes that are not part of the majority charge carriers, which are the majority of charges within a semiconductor.

The FJE3303TU is a three-terminal device, so it has three terminals: a source, a drain and a gate. The source and the drain are used to apply a DC voltage to the transistor, while the gate is used to control the current through the transistor.

When a positive voltage is applied to the source and the drain of the FJE3303TU, the minority carriers are attracted to the gate. The gate then forms an electric field, which attracts or repells electrons and holes. When the gate voltage increases, more minority carriers are drawn towards it, this increases the drain current.

When the gate voltage decreases, the electric field diminishes and fewer electrons and holes are attracted towards the gate, so the drain current decreases. This is the basic principle of a FET and is how the FJE3303TU works.

The FJE3303TU is an excellent choice for many different applications, thanks to its small size, low cost and high performance. It can be used in analog and digital circuits, and is capable of handling high frequencies. It also has an internal protection circuit to protect it from overcurrent. All of these features make the FJE3303TU a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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