FJE5304DTU Allicdata Electronics
Allicdata Part #:

FJE5304DTU-ND

Manufacturer Part#:

FJE5304DTU

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 4A TO-126
More Detail: Bipolar (BJT) Transistor NPN 400V 4A 30W Through ...
DataSheet: FJE5304DTU datasheetFJE5304DTU Datasheet/PDF
Quantity: 1728
1 +: $ 0.41580
10 +: $ 0.36666
100 +: $ 0.28098
500 +: $ 0.22214
1000 +: $ 0.17770
Stock 1728Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 30W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Description

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FJE5304DTU is a NPN transistor manufactured by Fairchild Semiconductor. It features the low cost, high-speed switching operation, and high-performance characteristics necessary for a wide variety of applications in the analog, digital, and power areas. The device is available in a TO-220 package, with dual-inline package options also available.The FJE5304DTU features a simple yet effective gate structure, allowing it to handle moderate power levels while providing minimal distortion and voltage/current levels that can be safely used in many applications. Additionally, this transistor features both low-current and high-current performance levels, allowing for efficient and versatile operation.The FJE5304DTU is an NPN bipolar junction transistor (BJT). As a BJT, it consists of two P-type materials connected by an N-type material. BJTs are used in many applications due to their relatively low switching times and low temperature coefficient. BJTs can handle larger amounts of power than field-effect transistors (FETs), but are also used in applications where short switching times are needed.In terms of operation, the FJE5304DTU relies on the base-emitter junction, which is the PN junction formed between the emitter and base lead of the transistor. When a voltage is applied to this junction, it electric field creates a space charge region, allowing current to flow to or from the base lead. This current controls the transfer of electrons between the base and emitter, which is the main mechanism of operation in BJTs.In terms of applications, the FJE5304DTU is often used in circuits that require high power handling capabilities and/or fast switching speeds. These applications can include, but are not limited to, motor control, power conversion, and audio amplification. The transistor is also useful in applications where low distortion, low noise, and high gain are desired, making it a versatile device.Overall, the FJE5304DTU is a powerful and efficient NPN bipolar junction transistor that provides high power and fast switching capabilities for a wide variety of applications. Its design and characteristics allow for efficient and versatile operation, making it suitable for a wide range of applications. The device is available in a variety of packages, making it suitable for almost any project.

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