FJL4215OTU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	17A
Voltage - Collector Emitter Breakdown (Max):	250V
Vce Saturation (Max) @ Ib, Ic:	3V @ 800mA, 8A
Current - Collector Cutoff (Max):	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 1A, 5V
Power - Max:	150W
Frequency - Transition:	30MHz
Operating Temperature:	-50°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264-3

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Introduction

FJL4215OTU is a single-transistor bipolar junction transistor (BJT). It is a PNP type transistor and has an active area of 0.35 x 0.2 mm2 and an emitter of 0.15 μm. FJL4215OTU has excellent switching performance and is suitable for use in automotive, industrial, and consumer applications.

Applications

FJL4215OTU is used for power switching, signal switching, solid-state relay, amplifier, and voltage reference applications. It is particularly suitable for DC/DC converters and customer electronic equipment in automotive, industrial, and consumer electronics. It has high switching speed and low ON resistance which makes it suitable for high-side and low-side transistor applications. It has excellent linearity and it can be used for applications that require precise control. Furthermore, FJL4215OTU can also be used in analog and digital signal conditioning, power conversion, voltage level detection, video signal switching, audio signal switching, and radio frequency signal switching applications. It is also suitable for general purpose amplification, such as RF amplifiers, audio amplifiers, and power amplifiers.

Working Principle

FJL4215OTU works on the principle of BJT transistors. A BJT transistors works by having three terminals; the emitter, collector and base. The emitter is heavily doped and the base is lightly doped. With the application of a bias voltage, the electrons from the emitter will cross the potential barrier formed by the combination of the base and collector regions and enter the collector region. This will form a current flow between the emitter and collector. The collector current is controlled by the base current. By varying the base current, the collector current will increase or decrease. The ratio of base current to collector current is known as the current gain of the transistor. The collector voltage will also be affected by the base current. This type of transistor is used for both switching and amplifier applications.

Conclusion

FJL4215OTU is a single-transistor bipolar junction transistor (BJT) which is suitable for automotive, industrial, and consumer applications. It is well-suited for power switching, signal switching, solid-state relay, amplifier, and voltage reference applications. It is also suitable for analog and digital signal conditioning, power conversion, voltage level detection, video signal switching, audio signal switching, and radio frequency signal switching applications. The working principle of this transistor is based on the principle of BJT transistors wherein the collector current is controlled by the base current.

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