FJL6920YDTU Allicdata Electronics
Allicdata Part #:

FJL6920YDTU-ND

Manufacturer Part#:

FJL6920YDTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 800V 20A TO-264
More Detail: Bipolar (BJT) Transistor NPN 800V 20A 200W Throug...
DataSheet: FJL6920YDTU datasheetFJL6920YDTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Power - Max: 200W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264-3
Description

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The FJL6920YDTU is a single bipolar junction transistor (BJT). Its main application is in switch mode power supplies (SMPS), low voltage regulator circuits, driver circuits, audio amplifiers, and voltage reference circuits. This device is designed to switch at high speeds, which makes it ideal for a variety of applications in both industrial systems and consumer electronics.

The FJL6920YDTU can be used as either an NPN or PNP transistor, depending on the application. The device is housed in a TO-92 package, and has a voltage rating of 6.0v, relative to a minimum current of 20mA. This transistor has a maximum power dissipation of 500mW, and has a maximum DC current gain of 300.

The structure of a bipolar junction transistor is made up of two PN junction layers. The base layer is used to control the electrical properties of the N-type and P-type sides. When used as an NPN transistor, current flows from the collector to the emitter when the base is forward biased. This creates a saturated current in the collector-base junction when the base is sufficiently excited. When used as a PNP transistor, the current flows from the emitter to the collector when the base voltage is forward biased, and creates a saturated current in the the collector-base junction.

The FJL6920YDTU is capable of highly reliable switching, with a very low on-state resistance, and a minimum turn-on voltage. It is also suited for high-frequency applications, and is capable of switching up to 1MHz. The device operates at high efficiency, and can provide long-term stability and reliable performance even in harsh and demanding environments.

The FJL6920YDTU offers many features and benefits to the user, including a low operating current requirement, extremely low temperature coefficient, excellent thermal cycling performance and superior thermal stability. The device is also highly reliable and has a low power dissipation. The FJL6920YDTU is an ideal choice for a wide range of applications in both industrial and consumer electronics markets.

The specific data is subject to PDF, and the above content is for reference

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