FJN13003BU Allicdata Electronics
Allicdata Part #:

FJN13003BU-ND

Manufacturer Part#:

FJN13003BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 1.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 1.1W T...
DataSheet: FJN13003BU datasheetFJN13003BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Power - Max: 1.1W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: FJN13003
Description

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The FJN13003BU is a NPN Bipolar Transistor. It is a single piece of 15V, 200mA, and soon, with a low junction capacitance. This transistor is a versatile device, and is ideal for use both in high gain and low noise amplifiers, as well as fast switching applications.

The FJN13003BU features a low saturation and high gain current gain, along with a high breakdown voltage, high speed and low power dissipation. It is constructed from a low-cost material that can be used to provide a very low-cost solution. The device has an integrated collector-emitter diffusion, allowing it to operate over a wide range of temperatures, making it suitable for use in many applications.

To use the FJN13003BU effectively, it must be mounted on either a Printed Circuit Board (PCB) or a Flex-Foil substrate. The device can then be wired up using a number of different techniques, depending on the application. In some cases, the entire device can be bought as a complete kit, ready to be wired and mounted. This helps to reduce the amount of time needed to set up the device.

The FJN13003BU operates at both low and high frequencies, and has a very low noise figure, making it suitable for use in many RF applications. The device also has a high frequency response, which means it can be used in applications where high frequencies are present.

The working principle of the FJN13003BU is based on the P-N junctions. This device has two P-N junctions, which are connected in series with each other. When current is applied to the P-N junction, it causes the electrons from the P side to flow towards the N side, creating a current loop. This current loop is used to operate the device, and this is the same principle used in many other transistors.

The FJN13003BU can be used for a variety of applications, including precision, short-ranged, low-noise low-power devices and portable power applications. The device is also suitable for use in solid-state circuits, fibre optics and laser applications. The device is also used in RF circuits, where its ability to operate at high frequencies and low noise levels can be of great benefit.

The FJN13003BU is a great device to use in low power applications, as it is highly efficient and can be used to conserve energy. The device also provides excellent noise immunity, making it ideal for use in noisy environments. Furthermore, the device has a low junction capacitance, allowing it to be used in circuits operating at very high frequencies.

Overall, the FJN13003BU is a great choice for many different applications. It is a low cost device which can provide low current gain, high breakdown voltage, high speed, low power dissipation and low noise. Additionally, its ability to operate at both low and high frequencies makes it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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