Allicdata Part #: | FJP9100TU-ND |
Manufacturer Part#: |
FJP9100TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 275V 4A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 275V 4A ... |
DataSheet: | FJP9100TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 275V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 5mA, 2A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 500mA, 5V |
Power - Max: | 40W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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The FJP9100TU is an industry-leading NPN silicon junction transistor that is designed for use in high-speed switching, low-level amplifier, and driver applications. It is extensively used for its superior characteristics, including the ability to handle up to 5.2 watts of power, exceptional linearity and low distortion, and high switching speed.
The FJP9100TU is a single bipolar junction transistor (BJT), which means it is composed of a single base/emitter junction with a base and collector connection. The FJP9100TU is designed for applications where a low noise and superior linearity performance is required. It is also highly reliable due to its built-in protection against voltage and current spikes.
The FJP9100TU is typically used as an amplifier and driver circuit due to its high linearity. It is suitable for audio amplifiers, power amplifiers, interface circuits, and other low-level or high-frequency switching circuits. It can also be combined with other BJT or FET transistors to form complex driver or amplifier circuits.
The FJP9100TU is ideal for use in high-speed devices, where its low capacitance ensures faster switching times and improved response time. The transistor\'s built-in ESD protection and low-threshold voltage make it ideal for applications requiring high levels of static protection. The FJP9100TU also features a low ON-resistance, allowing it to handle up to 5.2 watts of power.
The FJP9100TU\'s working principle is simple. When a voltage is applied to the base terminal, the base-emitter junction allows the flow of electrons into the emitter. This increases the number of electrons in the emitter and causes the collector-emitter current to flow. This current is then amplified and is used for low-level or high-frequency switching. When the voltage is removed from the base terminal, the process is reversed.
The FJP9100TU is an extremely versatile device, as it can be used for a wide range of applications. Its excellent linearity and low distortion characteristics make it ideal for audio amplifiers, power amplifiers, and driver circuits. Its low supply current and low total harmonic distortion make it suitable for interface circuits, low-level switching, or RF circuits. It is also an ideal choice for high-speed switching applications.
The FJP9100TU is a reliable and versatile device, and its high performance makes it an ideal choice for a wide range of applications. Its substantial power capability, exceptional linearity and low distortion performance, and ESD protection make it the preferred choice for many industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FJP9100TU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 275V 4A TO... |
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