Allicdata Part #: | FJV1845UMTF-ND |
Manufacturer Part#: |
FJV1845UMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 120V 0.05A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 50mA 110MHz 300m... |
DataSheet: | FJV1845UMTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 600 @ 1mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 110MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FJV1845 |
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FJV1845UMTF is a single bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor. It is intended for use in high-powered, low-noise applications such as RF amplifiers, switching circuits, and microprocessor applications, or any circuit that requires low-noise operation with high current and voltage capacity.
The FJV1845UMTF is a silicon integrated circuit that consists of three elements in a single package. It contains an emitter, a base, and a collector. The emitter is responsible for supplying current to the device, the base defines the amount of current that flows through the device, and the collector is responsible for receiving the current. The FJV1845UMTF uses a basic n-p-n type transistor architecture, and is designed to operate with up to 80 volts.
In operation, the FJV1845UMTF acts as a switching element between its collector and base, controlling the amount of current that passes through the collector. When a voltage is applied to the base of the device, current flows between the emitter and collector, and when the voltage is removed, the current flow stops. This allows the device to function as an amplifier, as the current can be increased or decreased depending on the base voltage.
The FJV1845UMTF is designed to provide reliable performance with low distortion in both switching and amplification applications. Its low input-offset voltage, low bias current capability, and high collector-base capacitance make it well-suited for both high-frequency and high-power applications. Additionally, the FJV1845UMTF features a high frequency cutoff frequency of up to 50MHz, making it suitable for a variety of high-speed applications.
The FJV1845UMTF can be used in a variety of power and signal conditioning applications, including RF amplifiers and switch circuits. Additionally, the device can be used as an amplifier or driver in applications such as motor control or power conditioning, or as a current source in LCD displays and projectors. The device is also suitable for use in switching applications, such as audio output stages or power converters, and can be used as a variable resistor in analog filtering and signal conditioning circuits.
The FJV1845UMTF is a reliable, efficient single bipolar junction transistor, with a range of features that make it suited to a variety of applications. It is designed to provide reliable performance with low distortion, and features a high frequency cutoff frequency of up to 50MHz, making it suitable for a variety of high-speed applications. The device is suitable for use in a range of power and signal conditioning applications, including RF amplifiers and switch circuits, and can also be used in a variety of analog signal conditioning applications.
The specific data is subject to PDF, and the above content is for reference
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