Allicdata Part #: | FJX733OTF-ND |
Manufacturer Part#: |
FJX733OTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.15A SOT-323 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 200m... |
DataSheet: | FJX733OTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 1mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | FJX733 |
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The FJX733OTF is a single bipolar transistor, specifically designed for power amplifier applications such as switching and linear applications. FJX733OTF is designed to improve power conversion efficiency and response time in a variety of output stages. It is a low power device with a maximum collector-to-base break down voltage of 40V and maximum collector-to-emitter voltage of 30V. It can handle a maximum collector current of 0.2A and a maximum power dissipation of 0.25W.
The working principle of the FJX733OTF is based on the relation between the voltage applied to the base and the collector-emitter current. This relation is described by the bipolar transistor current gain, or hFE. In its active region the current gain (hFE) is defined as the ratio between the collector current (Ic) and the base current (Ib). When a base voltage is applied, the base current will start increasing, depending on the voltage applied. As the current increases, the collector current increases as well, in proportion to the hFE of the transistor. The Collector-Emitter voltage (Vce) will also start increasing as the collector current increases.
The FJX733OTF is a high performance power amplifier transistor, designed for use in linear and switching applications. It has an optimized hFE for high conversion efficiency and improved response time. It achieves high efficiency by operating in both active and saturated states. When operating in active state, the current gain is adjustable with the base current, making it possible to adjust the gain to match the system requirements. When operating in saturated state, the collector-emitter voltage remains constant despite changes in the collector current. It is ideal for power amplifier applications where a constant output current is required.
The FJX733OTF is designed for use in a variety of power amplifier applications such as telecommunication systems, portable electronics, medical imaging, automotive electronics and more. It is suitable for use as audio power amplifiers and for low power wireless applications such as Bluetooth, RFID, and Wi-Fi. It is also very useful in high voltage applications such as DC-to-DC converters.
The FJX733OTF is designed to provide high performance and efficiency in power amplifier applications. It has an optimized hFE for improved efficiency and response time. This allows it to be used in a variety of linear and switching applications. Additionally, it can be used in high voltage applications such as DC-to-DC converters. Lastly, it is suitable for use as audio power amplifiers and for low power wireless applications such as Bluetooth, RFID, and Wi-Fi.
The specific data is subject to PDF, and the above content is for reference
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