FJY3003R Discrete Semiconductor Products |
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Allicdata Part #: | FJY3003RTR-ND |
Manufacturer Part#: |
FJY3003R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SOT523F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJY3003R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | FJY3003 |
Supplier Device Package: | SOT-523F |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJY3003R is a popular transistor made by Fuji Electric, one of the world’s leading manufacturers of professional transistor products. It is a single pre-biased bipolar junction transistor (BJT) designed for use in commercial electronics applications.
The FJY3003R has a collector-emitter voltage rating of 40 V, an emitter-base voltage rating of 5V and a collector-emitter current rating of 300 mA. It also has a very low current gain, also known as hFE, of 25 typically. This low current gain makes it ideal for use in low-power and low-voltage applications.
The FJY3003R is a symmetrical, symmetrical Bipolar transistor with a typical On-characteristic voltage of 0V. This makes it ideal for use in applications where the need for a constant collector-emitter voltage must be maintained. It is also suitable for applications where the need for a very low-noise operation must be satisfied.
The FJY3003R works by controlling the current flowing from the collector to the emitter. It does this by utilizing the base-emitter (BE) junction of a BJT. The voltage supplied to the base-emitter junction causes a small current to flow through it. This current is then amplified by the transistor, allowing a greater current to flow from collector to emitter.
The FJY3003R is designed to operate at various high frequencies, which makes it well suited for use in various radio frequency (RF) applications. It also makes a great choice for use in data acquisition systems, digital logic circuits and other low-power digital devices.
The FJY3003R is designed to offer a high reliability and excellent noise performance. It also features a wide temperature range, making it suitable for use in both hot and cold temperature environments. As the transistor is pre-biased, it eliminates the need for any setup procedures prior to installation.
In summary, the FJY3003R is an excellent choice for use in consumer electronics applications. With its low hFE performance, wide temperature ratings and pre-biased design, it makes an ideal solution for low power and low voltage applications. Its excellent noise characteristics and high reliability make it perfect for use in RF and data acquisition systems.
The specific data is subject to PDF, and the above content is for reference
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