FJY3011R Allicdata Electronics

FJY3011R Discrete Semiconductor Products

Allicdata Part #:

FJY3011RTR-ND

Manufacturer Part#:

FJY3011R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SOT523F
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJY3011R datasheetFJY3011R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SOT-523F
Base Part Number: FJY3011
Description

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The FJY3011R is a single, pre-biased NPN transistor type used in many different applications. Its superior characteristics as a small signal transistor make it ideal for applications such as switches, amplifiers and audio circuits. Developed by Motorola in 1988, this transistor is still one of the most popular and widely used small signal transistors.

The structure of an FJY3011R transistor consists of three layers of semiconductor material. The two base layers are the emitter and collector. Also included are the gate and base layers. The base has a width of 0.25 microns, which is about 5 times thinner than a human hair. This helps to create a more consistent and reliable operation.

The operation of an FJY3011R is based on the PNP-NPN insulated-gate bipolar transistor (IGBT) principle. This type of transistor is utilized in many electronic systems due to its lower power consumption and the ability to operate at high frequencies. The FJY3011R uses a P channel IGBT in order to control current flow and provide a higher input impedance.

The purpose of pre-biasing the FJY3011R transistor is to eliminate the need to use external voltage sources to bias the device. By applying a positive voltage to the gate of the transistor, it will be turned on and current will flow between the emitter and the collector. This allows the transistor to be used as a switch or in an amplifying circuit. Pre-biasing also prevents the transistor from becoming saturated, resulting in improved performance.

The FJY3011R is a pre-biased, single NPN transistor that can be used in a wide variety of electronic systems. Its superior characteristics, such as its small size, low power consumption, and high frequency operation make it an ideal choice for many applications. Its pre-biased feature also saves time and money by eliminating the need for external voltage sources.

The specific data is subject to PDF, and the above content is for reference

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