FJZ594JBTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Voltage - Breakdown (V(BR)GSS):	20V
Current - Drain (Idss) @ Vds (Vgs=0):	150µA @ 5V
Current Drain (Id) - Max:	1mA
Voltage - Cutoff (VGS off) @ Id:	600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds:	3.5pF @ 5V
Power - Max:	100mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-623F
Supplier Device Package:	SOT-623F

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FJZ594JBTF Application Field and Working Principle

Junction gate field-effect transistors (JFETs) are semiconductors that exploit the electric field generated by a gate control terminal to modulate current conduction across the two other terminals (source and drain). Due to their simple operation principle, JFETs are convenient circuits devices with excellent linearity, low noise, and high input impedance. As a result, they are extensively employed in many important application fields such as low-noise amplifiers, current-controlled digital gates, active filters, and so on.The FJZ594JBTF is an N-channel enhancement-mode depletion-load JFET from the Fairchild Semiconductor family. It is specifically designed to maximize amplifier stability, low noise, and battery drain features. This transistor features a voltage-controlled source with an integrated output resistance, allowing for excellent source impedance matching for a wide range of amplifier designs. Its lead-free semiconductor structure and small plastic package make FJZ594JBTF especially suitable for use in RF, audio, and instrumentation applications.Now, let’s look into how FJZ594JBTF works. It utilizes the “channel effect” phenomenon for controlling source-drain conduction. When a voltage is applied to the gate of FJZ594JBTF, a narrow depletion region will be formed under the transistor’s gate. This depletion region restricts current flow through the channel, making it hard for electrons to travel from source to drain. The higher the gate voltage, the stronger the depletion region and the weaker the source-drain current.As the FJZ594JBTF is a depletion-load transistor, it doesn’t need any bias current to work. This feature makes FJZ594JBTF particularly suited for use in battery-powered circuits. Additionally, the transistor’s low-voltage cutoff ensures a low drain current during standby to further minimize battery drainage.To summarize, the FJZ594JBTF is a low-power, low-noise, high-linearity JFET that provides excellent stability. It has a wide variety of application fields and is suited for use in circuitry powered by batteries. The FJZ594JBTF works by utilizing the “channel effect” phenomenon to control current conduction and provide superior performance.

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