FLZ11VB Allicdata Electronics

FLZ11VB Discrete Semiconductor Products

Allicdata Part #:

FLZ11VBTR-ND

Manufacturer Part#:

FLZ11VB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 10.7V 500MW SOD80
More Detail: Zener Diode 10.7V 500mW ±3% Surface Mount SOD-80
DataSheet: FLZ11VB datasheetFLZ11VB Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 10.7V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 8.5 Ohms
Current - Reverse Leakage @ Vr: 133nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Base Part Number: FLZ11
Description

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Diode-Zener-Single is a type of diode which is especially constructed to allow current to flow in one direction. The FLZ11VB is one such diode, and it has various applications in electronics and electrical engineering. This article will discuss the details of the device, its application field and working principle.

The FLZ11VB diode is designed for surface mount applications in circuit boards with high thermal and electrical requirements. It has a maximum voltage rating of 5.2V and a maximum power dissipation of 850mW. Its typical breakdown voltage is 6.3V, with a clamping voltage of 10V. It also has a low maximum forward voltage drop at 1.1V. The diode is packaged in a static-safe SOD-323 SMB surface mount form factor.

The FLZ11VB diode offers both commercial and industrial grade applications. In the commercial grade, it is typically used in power supplies, clamps, and current-limiting circuits. It can also be used in transistors, circuits, and power suppliers to provide protection against reverse voltage. In industrial grade applications, it is most commonly used in voltage regulation circuits, current limiting protection, and transient voltage suppressor (TVS) circuits.

The working principle of the FLZ11VB diode is based on the PN junction characteristic. PN junctions are formed by connecting two different materials together, such as p-type semiconductors and n-type semiconductors. When a voltage is applied across the two materials, a potential barrier is created, preventing any current from flowing in the reverse direction. With the FLZ11VB, the potential barrier height is relatively low, allowing a current to flow even when the applied voltage is slightly higher than the breakdown voltage of 6.3V. When a voltage higher than the breakdown voltage is applied, the forward resistance of the diode drops sharply, and the device enters a breakdown mode.

The FLZ11VB diode is most commonly used in applications that require a low on-state resistance, or a large amount of current to be handled quickly. Its low breakdown voltage and low forward voltage drop make it ideal for use in circuits with power supplies, transistors, and surge protection relays. Additionally, its excellent transient response and robust construction make it an ideal choice for industrial grade applications. All in all, the FLZ11VB diode has become an invaluable tool for circuit designers and engineers.

The specific data is subject to PDF, and the above content is for reference

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