FM3MMB1060MAMDA Allicdata Electronics
Allicdata Part #:

BEL15642-ND

Manufacturer Part#:

FM3MMB1060MAMDA

Price: $ 506.30
Product Category:

Uncategorized

Manufacturer: Belden Inc.
Short Description: FMT OM3 MPO12(M-M) B 12F 60M
More Detail: Cable Fiber Optic To
DataSheet: FM3MMB1060MAMDA datasheetFM3MMB1060MAMDA Datasheet/PDF
Quantity: 1000
1 +: $ 460.27200
Stock 1000Can Ship Immediately
$ 506.3
Specifications
Series: *
Part Status: Active
Description

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FM3MMB1060MAMDA is a semiconductor device first designed and introduced by its manufacturer FairChild Semiconductor. The device is categorized as a high-voltage power MOSFET and have multiple common applications among industries where it is commonly used.

The main application of FM3MMB1060MAMDA device is for high voltage power MOSFET application where it can be operated from low voltage to high voltage depending on the environment. It is a high voltage, low-power device that can handle up to 800V and is suitable for high power & higher efficiency applications. The device is characterized by the following features:

  • Low Drain-Source On-State Resistance (RDS(on)) of max. 8mO at Vgs = 10V. 
  • Low Input/Output Capacitance (Ciss/Coss) of max. 175pF/107pF at Vds = 20V.
  • Built-in P-Channel Enhancement MOSFET enabling fast switching at high efficiency.
  • High Durability due to the special gate oxide technology.

The working principle of FM3MMB1060MAMDA device is based on the traditional metal-oxide semiconductor field effect transistor (MOSFET) structure. In a normal situation, when there is low voltage applied to the Gate, the channel between the source and the drain that is created by the MOSFET remains nonconductive. However, when the voltage applied at the gate is increased, the channel connecting the source and the drain starts to conduct, allowing electric current to flow from the drain to the source.

The FM3MMB1060MAMDA device also offers a built-in P-Channel enhancement MOSFET, which enables fast switching and higher efficiency. This additional feature allows the device to achieve low gate capacitance and low switching time for high-power applications.

The device also has a high-durability feature, due to its use of special gate oxide technology. This technology helps to avoid breakdowns resulting from gate-oxide degradation, which is essentially the thinning and breaking apart of the gate oxide layer caused by the application of high voltage.

In conclusion, the FM3MMB1060MAMDA device is a reliable and efficient semiconductor device that has multiple applications, making it one of the best solutions for high voltage power applications. Its easy to use features make it suitable for a wide range of applications, including solar, automotive, lighting, and power conversion systems.

The specific data is subject to PDF, and the above content is for reference

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