Allicdata Part #: | FMBA06TR-ND |
Manufacturer Part#: |
FMBA06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 0.5A SSOT-6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 80V 50... |
DataSheet: | FMBA06 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 700mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-SSOT |
Base Part Number: | FMBA06 |
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The FMBA06 is an array of six NPN transistors connected together in a particularly advantageous configuration. As a result, it provides a higher power output with lower power consumption than other array designs. This is achieved by using a single base connection and varying the current through the collector-emitter junction of each transistor.
The working principle of the FMBA06 transistors is based on the idea of a bridge configuration. When the base voltage is applied, current flows through two of the transistors and creates a voltage drop across the two base-emitter junctions that serves to reduce the potential difference between the two collectors. This voltage drop limits the current flowing through the other four transistors, allowing the FMBA06 to provide a higher output power with lower power consumption than other types of array configurations.
The FMBA06 transistors are suitable for a range of applications, but are most commonly used in radio frequency (RF) power amplifiers in mobile phone handsets. The FMBA06 array is well-suited to this application due to its low power consumption and high power output. Other applications include medical instrumentation, broadcasting equipment and power switching applications.
The FMBA06 transistors feature a very low noise level and excellent thermal stability, making them ideal for RF applications. They also have over-current protection, which helps to prevent damage to the device due to over-heating. The transistors have a wide operating temperature range and can be operated from -40°C to +125°C.
The FMBA06 transistors are easy to use and require minimal external components. They can be soldered directly onto a PCB board or a socket and then connected to the power supply and logic circuitry. The array layout of the transistors makes them very efficient in terms of power dissipation, providing the benefit of improved efficiency in applications such as radio frequency power amplifiers.
The FMBA06 transistors are an excellent choice for a wide variety of applications. They provide a high output power with low power consumption, and their array configuration makes them well-suited for RF applications. Furthermore, they are easy to use and require minimal external components. These features make the FMBA06 transistors a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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