FMBS549 Allicdata Electronics
Allicdata Part #:

FMBS549-ND

Manufacturer Part#:

FMBS549

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 1A SSOT-6
More Detail: Bipolar (BJT) Transistor PNP 30V 1A 100MHz 700mW S...
DataSheet: FMBS549 datasheetFMBS549 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 700mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Description

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The FMBS549 is a bipolar junction transistor (BJT) used in a wide variety of applications. It is a single transistor, with a power dissipation rating of 500 mW and a maximum collector current of 150 mA. The transistor can handle a wide range of operating conditions including temperatures as low as -55°C and up to +150°C.

The FMBS549 is commonly used in small-signal, low-power applications such as amplifiers, oscillators, and switching circuits. It can be used as a driver stage in audio applications, or as a linear amplifier in video applications. The FMBS549 is also suitable for low-frequency switching applications, such as relays, aid in controlling power consumption, and to protect components from overload.

The transistor consists of three primary regions; the collector, the base, and the emitter. A small bias current is applied between the base and the emitter, creating a small voltage drop. This voltage drop, in turn, causes a larger current to flow through the collector and the emitter, creating an amplification effect. In terms of the input and output, this current is known as “collector current”, and the output is the “collector voltage”.

The FMBS549 has a higher current gain than other similar transistors, offering an improved linearity and better reliability. This is due to an improved base-collector junction, which is designed to reduce the effects of junction leakage. The FMBS549 also has a higher breakdown voltage, with a maximum rating of 200V. This makes it suitable for applications where a greater amount of power needs to be handeled, such as in power supply circuits. There is also a low-noise version of the FMBS549 available, for applications where a lower amount of noise is required.

The FMBS549 is also well-suited for small-signal and power applications, where it can be used as a voltage regulator or as a switching device. It is a versatile transistor, offering low power consumption, low distortion, and good reliability in a variety of applications. Due to its wide range of operating conditions, it can be used in a variety of environments including consumer, medical, industrial and aerospace applications.

The specific data is subject to PDF, and the above content is for reference

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