FML10T148 Allicdata Electronics
Allicdata Part #:

FML10T148-ND

Manufacturer Part#:

FML10T148

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 12V 1.5A SMT5
More Detail: Bipolar (BJT) Transistor NPN + Diode (Isolated) 12...
DataSheet: FML10T148 datasheetFML10T148 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11484
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN + Diode (Isolated)
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 200mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMT5
Description

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Introduction

The FML10T148 is a single-bipolar junction transistor (BJT) device. It has been designed for analog applications in the Radio-Frequency (RF) and Hi-Frequency (HF) range, as well as for power amplification. Its operating principle is a type of transfer of current that occurs inside the base junction of a BJT. The device is mainly used in applications where low-noise and low-distortion circuits are paramount; for instance, in superheterodyne receivers and mixers, Radio and TV circuits and mobile phone devices.

Construction

The FML10T148 is a three-layer device that consists of a base, an emitter and a collector. It has a tiny chip of semiconductor material in which a hole, an electron and an interconnected pair of holes are stored. Anode and cathode wires attach to the terminals of the three layers, forming the device\'s external connections. The anode and cathode wires are also connected to the circuit that uses the device.

Working Principle

When a voltage is applied across the anode and the cathode, current flows through the three junctions inside the BJT. The current carrying electrons from the anode to the cathode is called a base current. This base current is then amplified in the collector-emitter junction, which produces a larger current in the reverse direction. This reverse current is referred to as a collector current. The amount of current amplification effected depends on the amount of base current, the type of transistor and the frequency of the applied voltage.

Application Field

The FML10T148 is exclusively dedicated to analogue electronic circuits that work in the RF and HF range. Typical applications for this transistor are receivers, mixers, TV circuits, and mobile phone devices, which require low levels of noise and distortion. It is especially useful when used in the superheterodyne receiver, a type of radio receiver that consists of several stages, each of which is designed to act as an amplifier, oscillator and detector.

Advantages

The FML10T148 is relatively inexpensive when compared to other BJTs. It also requires little power to operate and offers a wide range of operating frequencies. The transistor is compatible with a variety of standard logic elements and is capable of providing a high-level of stability and reliability. Moreover, its easy-to-fabricate terminals make assembly and repair of the device simple and quick.

Limitations

Although the FML10T148 offers excellent performance, certain limitations need to be taken into consideration. For example, the device is cased in an epoxy package, reducing its thermal capacity and maximum power dissipation. Additionally, its low-noise performance is mainly limited by the switch-on time, which can be rather long compared to other types of transistors.

Conclusion

In conclusion, the FML10T148 bipolar junction transistor is a cost-effective device well-suited for RF and HF applications requiring low-noise and low-distortion circuits. Its construction, working principle and applications are relatively simple compared to other types of transistors, and offer many benefits such as low power consumption, wide frequency range and excellent stability and reliability. Its main limitation is its thermal capacity and switch-on time.

The specific data is subject to PDF, and the above content is for reference

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