
Allicdata Part #: | FMP36-015P-ND |
Manufacturer Part#: |
FMP36-015P |
Price: | $ 10.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N/P-CH 150V 36A/22A I4PAC |
More Detail: | Mosfet Array N and P-Channel 150V 36A, 22A 125W Th... |
DataSheet: | ![]() |
Quantity: | 1000 |
25 +: | $ 9.95855 |
Series: | Polar™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 36A, 22A |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 25V |
Power - Max: | 125W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | i4-Pac™-5 |
Supplier Device Package: | ISOPLUS i4-PAC™ |
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The FMP36-015P is a high power MOSFET array with three high power MOSFET chips. It has been designed for applications in high frequency power conversion circuits. This semiconductor device is suitable for use in power supplies, motor drivers, and converters.
The FMP36-015P is a dual logic level, N-channel enhancement mode power MOSFET array with three high power Channels. It is constructed with a monolithic silicon gate structure, providing protection against thermal overload, and providing high efficiency, low switching losses, and improved performance. It features a low RDS(on) of 0.02 ohms with a maximum gate load of 5A. The channel reverse breakdown voltage is 80V, with a total array drain-source voltage (VDS) provided of 240V.
The FMP36-015P has an operating temperature range of -55°C to +225°C. It has a SOIC-14 package and an exposed thermal pad. In terms of application fields, the FMP36-015P is well-suited for motor drivers, power converters and power supplies. It is designed to handle high currents with either low or high switching speeds, making it suitable for applications that require both the high currents and frequent speed changes.
The working principle of the FMP36-015P can be explained using a simple circuit model. When a voltage is applied across the drain-source terminals, the MOSFETs form a conducting path, which allows the flow of current between the drain and the source. The gate voltage (VG) controls the amount of current that can flow through the MOSFETs by controlling the width of the conducting path. When the gate voltage is lower than the source voltage, the MOSFETs are off and no current will flow. When the gate voltage is higher than the source voltage, the MOSFETs are on, and current will flow.
The FMP36-015P is ideal for applications where high currents are required. It is designed to provide high efficiency and low switching losses, making it suitable for a variety of applications. Its high power levels, low RDS, and high operating temperature range make it ideal for motor drivers and power converters.
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