| Allicdata Part #: | FMS6G15US60S-ND |
| Manufacturer Part#: |
FMS6G15US60S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 15A 25PM-AA |
| More Detail: | IGBT Module Three Phase Inverter 600V 15A 73W Cha... |
| DataSheet: | FMS6G15US60S Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | -- |
| Configuration: | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 15A |
| Power - Max: | 73W |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 15A |
| Current - Collector Cutoff (Max): | 250µA |
| Input Capacitance (Cies) @ Vce: | 0.935nF @ 30V |
| Input: | Single Phase Bridge Rectifier |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | 25PM-AA |
| Supplier Device Package: | 25PM-AA |
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Transistors - IGBTs - Modules
The FMS6G15US60S is an insulated-gate bipolar transistor module that is designed with an integral high-threshold resistor. This module is suitable for a wide range of applications, such as motor controls, power inverters, switching power supplies, and voltage regulators. The FMS6G15US60S utilizes a DirectFET package, which provides the advantages of a standard transistor module with the additional benefit of the highly efficient DirectFET packaging.
Application Fields
The FMS6G15US60S is especially suited for applications that require high power efficiency and high current handling capability. The DirectFET package offers both low thermal resistance and low inductance for maximum power efficiency. The integral high-threshold resistor also reduces loss and increases power efficiency. It is also suited for applications that require accurate current control, such as motor control, power inverters, and switchmode power supplies. Additionally, the module is well-suited for use in voltage regulators, as it offers excellent thermal and electrical properties, as well as lower gate charge.
Working Principle
The FMS6G15US60S is an IGBT module that combines the high-speed switching of a bipolar transistor with the low on-state resistance of a MOSFET. This combination allows for high switching speeds with relatively low power losses. When the gate signal is high, a junction field-effect transistor is formed between the p+ layer of the gate and the n+ layer of the source, thereby allowing current to flow through the device. When the gate signal is low, little or no current flows, since no junction field-effect transistor exists.
The FMS6G15US60S also utilizes the principle of current modulation, where the current output is controlled by the applied gate signal. This allows for precise current control, which is needed for applications such as motor control and voltage regulation. Additionally, the high-threshold resistor reduces losses, since it limits the current when the gate voltage is low.
Overall, the FMS6G15US60S module is an ideal solution for applications that require high power efficiency, accurate current control, and high current handling capability. The DirectFET package reduces power losses and the integral high-threshold resistor ensures precise current control. This module is a versatile solution for motor control, power inverters, switching power supplies, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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FMS6G15US60S Datasheet/PDF