FMS7G20US60

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This article discusses the application field and working principle of the FMS7G20US60 IGBT module. IGBTs, or insulated-gate bipolar transistors, are power semiconductor devices used for switching and amplifying electrical signals. An IGBT is a three-terminal device consisting of two MOSFETs and one PN junction diode. It combines the high input impedance of the MOSFET with the low saturation voltage of the bipolar transistor. This makes it an ideal choice for applications that require large currents or high voltages.

The FMS7G20US60 is a 600V 7A IGBT module. With its low gate charge and low gate resistance, it is an ideal choice for applications such as motor control, uninterruptible power supplies, AC and DC inverters, lighting and HVAC systems. It provides a combination of features, including soft switching, protection against short circuit and secondary over-current, and over temperature protection. It is also highly reliable, and has a power density of 7kW/cm³.

The working principle of an IGBT is similar to that of a MOSFET. An electric field is established between the gate and the source, and the electric field induces charge carriers to move from one region to another. By controlling the voltage between the gate and the source, the resistance of the channel can be adjusted, allowing the current to flow or be cut off. When the current is cut off, the IGBT is in its off state, so no power is consumed. When the current is flowing, the device is in its on state, providing low on-state resistance and high current gain.

The FMS7G20US60 IGBT module\'s combination of features makes it suitable for a wide range of applications, such as motor control, uninterruptible power supplies, and AC and DC inverters. Its high power density and low gate resistance also make it well suited for high-power applications. Its protection features make it reliable and safe in high-voltage systems, while its soft switching capability enables improved efficiency and reduced switching losses.

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