FMS7G20US60S

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IGBTs (Insulated Gate Bipolar Transistors) have been around for years and have become an essential component in many fields due to their affordability and high capabilities. The FMS7G20US60S is an IGBT module developed by FMS Corporation, a major semiconductor manufacturer. This module is suitable for a wide range of applications and is known for its high efficiency and long life.

The FMS7G20US60S is a module consisting of a base plate and two stacked insulated gate bipolar transistors (IGBTs). It has several input and output terminals that support a wide range of currents and voltages, making it suitable for many applications. The module is designed for applications requiring high power and high efficiency, such as UPS systems, electric vehicles, and solar power. It also has a low content of RDS(on) losses, meaning it has a low power dissipation and can operate for long periods without overheating.

The working principle of the FMS7G20US60S module is simple. The two IGBTs of the module are connected in series, with each IGBT acting as a switch. When a voltage is applied across the two IGBTs, one IGBT is turned on, allowing the current to flow between them. As the current level increases, the voltage applied to the second IGBT increases, turning it on as well. This allows the current to flow through both IGBTs, creating a higher current and a higher voltage output.

The FMS7G20US60S module is an ideal solution for applications requiring high power and efficiency, such as solar power, UPS systems and electric vehicles. It has a built-in heat-protection system that prevents it from overheating and is capable of delivering high currents and voltages. Thanks to its low RDS(on) losses, it has a low power dissipation and can be used in many different types of applications.

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