FMXA-1106S Allicdata Electronics
Allicdata Part #:

FMXA-1106S-ND

Manufacturer Part#:

FMXA-1106S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: DIODE GEN PURP 600V 10A TO220F
More Detail: Diode Standard 600V 10A Through Hole TO-220F-2L
DataSheet: FMXA-1106S datasheetFMXA-1106S Datasheet/PDF
Quantity: 4314
Stock 4314Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 28ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Diodes are electronic devices important in the detection, conversion and control of signals. Rectifier diodes are specifically designed to convert AC to DC. A single rectifier diode, such as the FMXA-1106S, has 6 pins and a small body that can fit on a circuit board. It is the most commonly used in power applications.

FMXA-1106S diodes are unidirectional devices capable of blocking the flow of current in the opposite direction. It is mainly used for the protection and voltage rect!ification of electronic devices. It works by allowing current to pass in a forward direction, while blocking current in the opposite direction. In this way, it changes AC voltage to DC voltage.

The typical application fields of the FMXA-1106S include switching power converters in computers, communication systems, and other industrial automation equipments. It can also be used in solar energy, wind energy and other energy conversion systems.

The working principle of the FMXA-1106S is based on the properties of p-n junctions of semiconductors. When an electric field is formed across a p-n junction, problems can arise in the electric conduction of the junction, leading to asymmetric conduction with respect to the current direction.

The electric field is caused by the creation of a space charge region at the moment when voltage is applied to the p-n junction from the external circuit. A potential barrier is set up at the p-n junction, blocking the flow of electric current in the opposite direction. The field strength increases proportionally to the magnitude of applied voltage.

The advantage of the FMXA-1106S diode lies partly in its fast switching speed and wide range of operating temperature. It can achieve high speed operation with low on-volts and is thus suitable for high-speed switching systems. Furthermore, it provides superior performance and a wide operating temperature range up to 125℃.

The FMXA-1106S rectifier diode is an important component in the circuits of computers, communication systems, and other consumer electronic products. Its fast switching speed, wide operating temperature range and superior performance make it a great choice for many power applications.

The specific data is subject to PDF, and the above content is for reference

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