FODM121ER1V Allicdata Electronics
Allicdata Part #:

FODM121ER1V-ND

Manufacturer Part#:

FODM121ER1V

Price: $ 0.00
Product Category:

Isolators

Manufacturer: ON Semiconductor
Short Description: OPTOISO 3.75KV TRANSISTOR 4SMD
More Detail: Optoisolator Transistor Output 3750Vrms 1 Channel ...
DataSheet: FODM121ER1V datasheetFODM121ER1V Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Output Type: Transistor
Supplier Device Package: 4-Mini-Flat
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Vce Saturation (Max): 400mV
Current - DC Forward (If) (Max): 50mA
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Current - Output / Channel: 80mA
Voltage - Output (Max): 80V
Series: --
Input Type: DC
Rise / Fall Time (Typ): 3µs, 3µs
Turn On / Turn Off Time (Typ): --
Current Transfer Ratio (Max): 600% @ 5mA
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Number of Channels: 1
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Optoisolators are used for amplifying, converting, and transferring digital and analog signals. FODM121ER1V is one of types of optoisolators, characterized by its transistor output and photovoltaic input. It is a single channel, high-speed optoisolator. It has high reliability and is widely used in various applications.

FODM121ER1V Application Field

FODM121ER1V is widely used in industrial automation, automotive electronics, medical electronic products, measurement and control equipment, communication equipment, industrial lighting equipment, power supplies, sensors equipment, and optical products, etc. It can be used for data isolation, drive short circuit protection, current loop drive, line regulation, voltage regulation, analog data transfer and other occasions.

FODM121ER1V Working Principle

FODM121ER1V consists of an infrared emitting diode and a NPN-type silicon phototransistor output. During the working process, the infrared light is emitted by the LED which will be detected by the NPN-type phototransistor output. The photocurrent generated by the phototransistor output will activate the phototransistor to output a signal at the collector.

When the phototransistor receives enough illumination, it starts to conduct and the voltage at the emitter is close to 0 volts. The voltage of the collector is close to the voltage of the positive power supply of the device and the communication signal from the signal device is transferred to the load through the transistor.

When the LED does not receive any illumination, the phototransistor does not conduct and the voltage at the emitter is close to the supply voltage. That means the output signal can be controlled by the input illumination level.

FODM121ER1V is designed with enough optical coupling isolation in the circuit to ensure that the output electrical voltage signal and power supply do not affect each other. The most notable feature of the FODM121ER1V is its high-speed response speed. It features a switching speed that is less than 8 microseconds, which means it can handle a large amount of data transfer and it additionally provides anti-interference protection of up to 4 kV/ µs.

Conclusion

FODM121ER1V offers a wide range of applications and high-speed response times and anti-interference protections that make it a well-suited choice for technicians who are looking to optoisolate their circuit designs. In addition, it is designed with sufficient isolation to ensure the output electrical voltage signal and power supply is kept separate.

The specific data is subject to PDF, and the above content is for reference

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