FPN430A Allicdata Electronics
Allicdata Part #:

FPN430A-ND

Manufacturer Part#:

FPN430A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 2A TO-226
More Detail: Bipolar (BJT) Transistor PNP 30V 2A 100MHz 1W Thro...
DataSheet: FPN430A datasheetFPN430A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-226
Description

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Introduction

FPN430A is one of the most popular transistors in the world. It is a single bipolar junction transistor (BJT) with advanced features and a broad range of applications. In this article, we will discuss the application fields of the FPN430A and its working principles.

Application Fields

FPN430A transistors are widely used in the electronics industry due to their high performance and flexibility. The wide variety of applications include:
  • Power applications, such as amplifier stages and intermediate frequency (IF) amplifiers
  • Signal switching applications, such as relay switches and logic gates
  • Interference suppression applications, such as interference suppression filters
  • General low power applications, such as LED (light emitting diode) drivers
The FPN430A can also be used in high-speed switching applications, such as fast response protection circuits. With the ability to operate at frequencies up to 1MHz, the FPN430A is well suited for use in radio frequency (RF) communications systems.

Working Principle

Bipolar transistors are interconnected semiconductor diodes, which are combined with a single collector and emitter, and a combination of diodes connected to the emitter and collector. A base terminal lies between the emitter and collector, and binds the two together so that both are able to control the current flow between them. The current flow between the two is called the “collector-base current”.The FPN430A has a wide range of collector-base current, from 15mA to 400mA. This makes it suitable for a variety of applications, from low power applications such as LED drivers, to high-power applications such as amplifier stages.The FPN430A also has a high input impedance and a low output impedance, which makes it ideal for use as an amplifier stage. Its high gain (beta) value makes it capable of producing large amounts of power.

Conclusion

FPN430A is a single bipolar junction transistor (BJT) with advanced features and a broad range of applications. It is suitable for power applications, signal switching applications, interference suppression applications, and general low power applications. The FPN430A has a wide range of collector-base current, from 15mA to 400mA, a high input impedance, and a low output impedance. Its high gain value makes it ideal for use as an amplifier stage, and its ability to operate at higher frequencies makes it suitable for use in RF communications systems.

The specific data is subject to PDF, and the above content is for reference

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