FPN660 Allicdata Electronics
Allicdata Part #:

FPN660-ND

Manufacturer Part#:

FPN660

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 3A TO-226
More Detail: Bipolar (BJT) Transistor PNP 60V 3A 75MHz 1W Throu...
DataSheet: FPN660 datasheetFPN660 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-226
Base Part Number: FPN660
Description

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The FPN660 is a high-performance, cost-effective bipolar junction transistor (BJT) device, with a wide range of applications in commercial, industrial, and consumer equipment. It is especially suited for use in audio and video systems, as well as for general power and signal switching. This transistor is manufactured by Fairchild Semiconductor, a leading manufacturer of BJTs, and is designed for performance, reliability, and economy.

The FPN660 offers a wide range of features and benefits. It is manufactured using the advanced bipolar process and offers high breakdown voltage (V(BR)CBO) of up to 60V, making it suitable for high-current applications such as power conversion, audio and video signal processing, switching, and power conditioning. The FPN660 also features low on- and off-state leakage, making it well-suited for power saving operations. Furthermore, the FPN660 emits low noise, making it ideal for use in sensitive audio and video systems.

In terms of its working principle, the FPN660 is a PNP transistor with three terminals: the emitter, the base, and the collector. When a positive voltage is applied to the base terminal, electrons are injected into the base region, and the transistor is switched on. This causes current to flow from the collector to the emitter. When the voltage at the base terminal is reduced, the transistor is turned off, and the current flow is blocked.

The FPN660 is particularly well-suited for power control applications, particularly in systems using some form of pulse-width modulated (PWM) control. In such systems, the PWM signal is applied to the base of the FPN660, causing it to turn on and off in unison with the applied signal. This allows for accurate and efficient control of the output power. The FPN660 is also suitable for use in audio and video signal processing systems, since its low noise performance ensures that no unwanted noise is generated in the signal path as a result of its operation.

In addition, the FPN660 is also used in a wide range of switching applications. It is especially suitable for use in high-speed applications, due to its high switching speeds of up to 35 MHz. It is also used in power switching circuits, where its wide range of capabilities makes it ideal for applications such as motor control and AC/DC conversion. The FPN660 is also suitable for power conditioners, where its wide breakdown voltage range and low leakage currents make it ideal for controlling the amount of power delivered to the load.

The FPN660 is a versatile and reliable transistor for a wide range of commercial, industrial, and consumer applications. Its wide range of features, combined with its reliable performance, make it an ideal choice for a variety of power control, switching, and audio and video signal processing applications. Its wide range of capabilities make it an ideal choice for both general and specific applications.

The specific data is subject to PDF, and the above content is for reference

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