Allicdata Part #: | FR12GR02GN-ND |
Manufacturer Part#: |
FR12GR02 |
Price: | $ 4.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 400V 12A DO4 |
More Detail: | Diode Standard, Reverse Polarity 400V 12A Chassis,... |
DataSheet: | FR12GR02 Datasheet/PDF |
Quantity: | 1000 |
200 +: | $ 3.61992 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 12A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 25µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Description
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.Diodes - Rectifiers - Single: FR12GR02 Application Field and Working Principle
FR12GR02 is an advanced single rectifier diode with ultra-low forward voltage drop and a very low reverse recovery time. It is designed for general-purpose power applications where reliability and efficiency are paramount. This article will look at the application field and working principle of FR12GR02.Application Field
FR12GR02 can be used in a wide range of power applications, including AC/DC converters, DC/DC converters, and power supplies. Its ultra-low forward voltage drop allows for more efficient operation, while its very low reverse recovery time reduces total power losses and improves power efficiency. Additionally, its robust construction can handle higher operating temperatures and higher voltages. Specifically, FR12GR02 is ideal for high-frequency power converters, such as those used in renewable energy applications. Its low forward voltage drop and reverse recovery time enable fast signal switching with minimal losses, making it suitable for applications such as wind turbines, solar installations, and data centers. It is also suitable for battery charging systems, as it can provide fast and efficient charging with minimal power losses.Working Principle
FR12GR02 consists of two layers of PN junction semiconductors, connected in parallel. In normal operation, the two layers of semiconductor form a barrier preventing current flow. When a voltage is applied, the barrier breaks down and current flows in a controlled manner. Under forward bias, electrons in the p-type layer are pushed to the positive terminal, and holes in the n-type layer are attracted to the negative terminal. This creates an electric field across the junction, allowing current to flow from the p-type layer to the n-type layer. Under reverse bias, the electric field is reversed, preventing current from flowing across the junction. However, the reverse breakdown voltage is relatively low, preventing overvoltage damage. When the forward current is removed, the stored charge carriers (electrons and holes) recombine and create a reverse current. This is known as the reverse recovery time of a PN junction. The FR12GR02 is designed to reduce this time, allowing faster switching times and more efficient operation.Conclusion
FR12GR02 is an advanced rectifier diode designed for efficiency, reliability, and high-frequency operation. It is suitable for a wide range of power applications, particularly renewable energy systems such as wind turbines and solar plants. Its ultra-low forward voltage drop and reverse recovery time improve efficiency, while its low breakdown voltage prevents overvoltage damage.The specific data is subject to PDF, and the above content is for reference
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