Allicdata Part #: | FR153S-AP-ND |
Manufacturer Part#: |
FR153S-AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GPP FAST 1.5A DO-41 |
More Detail: | Diode Standard 200V 1.5A Through Hole DO-41 |
DataSheet: | FR153S-AP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 40V |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes have been commonly used in many of our electronic devices for a long time. It serves as a building block for many circuit applications, which makes it one of the most important components in any electronics related domain. The FR153S-AP diode is a useful, rectifying diode that can be used in a wide range of applications. This article will explain the application field and working principle of the FR153S-AP single rectifier.
The FR153S-AP is categorized as a silicon planar passivated, high current rectifying diode suitable for industrial and consumer applications. It is designed with a common anode and cathode, allowing the electrical current to flow in one direction only. This diode is typically used in switching power supplies, low-frequency rectifiers, DC/DC converters, and high current applications. Due to its robust construction, the FR153S-AP is able to handle currents as high as 10 Amps.
The ABS ratings of the FR153S-AP rectifier are maximum repetitive peak reverse voltage of 150V, minimum breakdown voltage of 114V and maximum RMS voltage of 104V. The other electrical characteristics of the device include minimum operating temperature of -55°C, maximum operating temperature of 125°C, maximum junction temperature of 175°C and maximum reverse current leakage of 10mA.
The working principle of the FR153S-AP rectifier involves the formation of a depletion layer, which is created by the polarized charges on a semiconductor device. During this process, the depletion region acts as an insulator and prevent electron flow in the reverse direction. The process begins with positive charges located at the anode and negative charges located at the cathode. When the device is forward-biased, the depletion layer formed between the p- and n-type layers will reduce in its width, allowing electrons to flow from the n-layer to the p-layer. However, when the device is reverse-biased, the depletion layer will widen, thus preventing electron movement. This is the fundamental working principle behind the diode and it is used in all types of rectifying applications.
The FR153S-AP rectifier is a versatile device and can be used in a wide variety of applications. Its robust construction makes it suitable for use in large current applications and it can handle currents up to 10 amps. The diode also has a wide temperature operating range, making it suitable for use in commercial, industrial, and consumer applications. Its ability to form a depletion layer with polarized charges makes it perfect for rectifying AC current and providing efficient power supply.
In conclusion, the FR153S-AP single rectifier is a versatile device with a wide range of applications. Its ability to handle large current, wide temperature operating range, and form a depletion layer make it a suitable choice for use in various switching and rectifying applications. The diode is a highly reliable part and is often used in power supplies and DC/DC converters for efficient operation.
The specific data is subject to PDF, and the above content is for reference
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