FR1D-13 Discrete Semiconductor Products |
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Allicdata Part #: | FR1DDITR-ND |
Manufacturer Part#: |
FR1D-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 200V 1A SMB |
More Detail: | Diode Standard 200V 1A Surface Mount SMB |
DataSheet: | FR1D-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | FR1D |
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FR1D-13 application field and working principle
FR1D-13 is a Silicon Rectifying Diode with low forward voltage drop and high reverse leakage current. It is generally used as a protection device in electronic circuitries. FR1D-13 diode belongs to the category of single-phase bridge rectifiers.
This device is often used in automobile and home electronics, including switching power supply applications, as it has a lower forward voltage drop, low thermal resistance, low reverse current leakage and reverse voltages of 13V. Another advantage of the FR1D-13 is that it can operate at high temperatures up to 125°C, enabling it to be used in high ambient temperature applications.
Principle of Operation
The FR1D-13 is a device that is based on the P-N junction. Its basic principle is that when two dissimilar metals are in contact with each other and if the potential magnitude at one junction is higher than the other, then this free energy results in the flow electrons or holes. This experience is known as the Diode Effect or PN Junction.
The basic idea of a P-N junction is to create an electric field across a semiconductor material such as silicon. The electric field is created by the electric field lines within the semiconductor. This electric field is responsible for creating a barrier that is capable of blocking the flow of electrons in the forward direction while allowing reverse current to flow in the opposite direction, and this electric field is created by the concentration of electric charge carriers.
The FR1D-13 consists of an N type semiconductor material with an electrode at one end and a P type semiconductor material with an electrode at the other end. When an external voltage is applied to this device, the Diode Effect takes place as the active area containing majority charge carriers get depleted, hence creating an electric field that results in the flow of electrons or holes, resulting in electric current.
Applications
The FR1D-13 is often used as the primary protection device in a variety of applications such as switching power supplies and electrical power systems. It is used as a power supply, energy storage and distribution, load balancing and protection device.
The diode is also used in DC-DC converters as it is capable of regulating current flow and providing voltage regulation. It is also capable of preventing short circuits and protecting sensitive components.
In addition to the above, the FR1D-13 is also used in automotive, home and appliance electronics and in telecommunications systems, as it has the capability to withstand high temperatures.
Conclusion
The FR1D-13 rectifying diode is a single-phase bridge rectifier with low forward voltage drop, low thermal resistance, and high operating temperatures. It is often used as a protection device in a variety of applications such as automotive, home and appliance electronics and telecom systems.
It is capable of regulating current flow, preventing short circuits and providing voltage regulation, thus making it highly suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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