FR3J-TP Discrete Semiconductor Products |
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Allicdata Part #: | FR3J-TPMSTR-ND |
Manufacturer Part#: |
FR3J-TP |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 600V 3A DO214AB |
More Detail: | Diode Standard 600V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | FR3J-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.13124 |
6000 +: | $ 0.12277 |
15000 +: | $ 0.11431 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | FR3J |
Description
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FR3J-TP is a single rectifier with fast recovery time, and is formed by a single PN-junction. Its application field is mainly in aircraft, military, and medium- and high-power rectification purposes. The working principle of FR3J-TP rectifiers is relatively simple. When the diode is forward biased, the electrons of the n-type region are attracted to the positive anode. As they reach the junction they will combine with the holes of the p-type region that were earlier attracted to the negative cathode. During this process, holes are created in the n-type region, leaving it negatively charged and the p-type region positively charged, resulting in a potential barrier that prevents any further electrons and holes from crossing it, creating the rectifying effect.Even though this is the basic principle of all PN-junction devices such as FR3J-TP, other aspects come into play. One of them is the material used in the device. FR3J-TP is made from Silicon Carbide, which has greater thermal and thermo-mechanical properties than the traditional Silicon. It has a low coefficient of thermal expansion, which improves the strength of the junction, allowing the device to handle high-voltage and high-current loads. Additionally, FR3J-TP rectifiers can operate at much higher temperatures compared to Silicon devices.When forward-biased, FR3J-TP becomes very conductive, allowing low voltage drop across its junction. This minimizes the power loss of the rectified circuit, which boosts the overall efficiency of the system. Furthermore, because of the fast recovery time of FR3J-TP rectifiers, they can be used in applications requiring high-frequency switching, or in situations where ripple-free output signals are a necessity.In resume, FR3J-TP is a single rectifier with great thermal and mechanical properties, that can handle high-voltage and high-current loads while providing fast recovery time and low voltage drop. Its application field is mainly in aircraft, military and medium- and high-power rectification purposes.The specific data is subject to PDF, and the above content is for reference
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