FS1JE-TP Discrete Semiconductor Products |
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Allicdata Part #: | 1505-FS1JE-TP-CHP |
Manufacturer Part#: |
FS1JE-TP |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 600V 1A SMAE |
More Detail: | Diode Standard 600V 1A Surface Mount SMAE |
DataSheet: | FS1JE-TP Datasheet/PDF |
Quantity: | 102000 |
6000 +: | $ 0.01235 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMAE |
Operating Temperature - Junction: | -50°C ~ 150°C |
Base Part Number: | FS1J |
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Diodes are important components used in countless electronic circuits and devices. They are widely recognized for their ability to control the flow of electric current in a circuit. The FS1JE-TP is a type of diode specifically designed to function as a rectifier. This section will discuss the application field and working principle of the FS1JE-TP.
As a rectifier diode, the FS1JE-TP can be used to convert alternating current (AC) to direct current (DC). It is commonly used in power supplies for power conversion, as well as for voltage regulation, signal processing, and frequency filtering. The FS1JE-TP is also popular for lighting applications, for example, in LED lighting.
The FS1JE-TP is a single-phase diode that features an ultra-fast recovery time, a low forward voltage drop, and a high surge current capability. Its features make it well-suited for high-frequency switching applications, such as in DC/DC converters and photovoltaic inverters. Moreover, it is designed to operate in a wide temperature range, making it suitable for harsh environments.
The working principle of the FS1JE-TP is based on its p-n junction. The p-n junction is a diode’s basic structure. It consists of two semiconductor materials: a P-type material, in which electrical current is composed of positive holes, and an N-type material, in which electrical current is composed of negative electrons. When the two semiconductor materials are combined, a barrier appears at the junction to form a p-n junction.
In the case of the FS1JE-TP, the p-n junction is used to control the flow of current. When the diode is forward biased, that is, when a positive voltage is applied to the anode and a negative voltage is applied to the cathode, the diode allows current to flow from the anode to the cathode. Conversely, when the diode is reverse biased, no current is allowed to flow. This process is known as rectification and is the basis of the FS1JE-TP’s operation.
In summary, the FS1JE-TP is a type of rectifier diode designed for use in power supplies and other applications that require voltage conversion or signal processing. It features an ultra-fast recovery time, a low forward voltage drop, and a high surge current capability. Its working principle is based on the p-n junction, which allows it to control the flow of current. As such, it is a valuable tool in the design of a wide range of electronic circuits and devices.
The specific data is subject to PDF, and the above content is for reference
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