
Allicdata Part #: | FS225R12OE4PBOSA1-ND |
Manufacturer Part#: |
FS225R12OE4PBOSA1 |
Price: | $ 254.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR ECONOPP-2 |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1200V 45... |
DataSheet: | ![]() |
Quantity: | 1000 |
4 +: | $ 231.54900 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 450A |
Power - Max: | 20mW |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 225A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FS225R12OE4PBOSA1 is an advanced insulated gate bipolar transistor (IGBT) module, which operates at a higher frequency compared to ordinary IGBTs. This advanced IGBT module is widely used for applications that require high power density and fast switching speeds. This IGBT module is designed for switching large currents and/or high voltages, and is suitable for many different types of applications from motor control to lighting and power control.
The FS225R12OE4PBOSA1 is a three-phase IGBT module that consists of twelve IGBTs in a single package. Each one of the IGBTs is rated for operation at 12V and 600A. This makes the module suitable for applications that require high currents and/or high voltages. The module also features fast switching speeds, which makes it ideal for applications where speed is of importance, such as motor control.
The FS225R12OE4PBOSA1 is used in a variety of applications, such as motor control, lighting control, power control, DC/DC and AC/DC conversion, and more. Its fast switching capabilities and high power efficiency makes it a great choice for applications that require reliability and high performance. The module is also capable of handling high temperatures, making it well-suited for use in challenging environments.
The FS225R12OE4PBOSA1 works on the principle of an IGBT, which is a solid-state device. An IGBT is a junction transistor comprising three terminals, the source, the drain, and the gate. The source and drain are connected to the input voltage and current while the gate is connected to a control signal. When a positive voltage is applied to the gate, the IGBT switches on and current flows across the junction. When the positive voltage is removed, the IGBT switches off and the current stops flowing.
One of the advantages of an IGBT is its high power efficiency. It is able to transfer high currents with low losses compared to other types of power transistors. In addition, IGBTs also have fast switching times, which is ideal for many applications that require fast switching of power. The FS225R12OE4PBOSA1 is a high quality and reliable module that provides excellent power performance for a wide range of applications.
In conclusion, the FS225R12OE4PBOSA1 insulated gate bipolar transistor module is an excellent choice for a variety of applications. Its fast switching times and high power efficiency make it well-suited for motor control, lighting control, power control, and DC/DC and AC/DC conversion. The module is also capable of handling high temperatures, making it reliable and suitable for many different types of applications. Overall, the FS225R12OE4PBOSA1 is a highly reliable and powerful IGBT module that is perfect for many different applications.
The specific data is subject to PDF, and the above content is for reference
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