
Allicdata Part #: | FS225R17KE3BOSA1-ND |
Manufacturer Part#: |
FS225R17KE3BOSA1 |
Price: | $ 332.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR ECONOPP-1 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | ![]() |
Quantity: | 1000 |
4 +: | $ 301.85500 |
Specifications
Series: | EconoPACK™+ |
Part Status: | Not For New Designs |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 340A |
Power - Max: | 1400W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 225A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 20.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FS225R17KE3BOSA1 is an insulated gate bipolar transistor (IGBT) module. It has a higher current capacity and higher voltage ratings than traditional components, making it an ideal choice for applications that require good performance and reliability.The module can be used in a variety of applications, such as industrial motor controllers, Uninterruptible Power Supply (UPS) systems, server power supplies, solar power conversion systems, power supplies, and motor drives.The FS225R17KE3BOSA1 is designed to operate with voltages up to 1200V. It has a blocking voltage of 1800V, with a maximum current of 225A. The gate drive requirements for the module are 12 V to 25 V, 3.2 A per channel.The module\'s construction allows for enhanced thermal performance, making it suitable for higher power systems. It is also RoHS compliant, meaning it meets the requirements of the Restriction of Hazardous Substances in Electrical and Electronic Equipment Directive.The FS225R17KE3BOSA1 consists of an IGBT chip, as well as a diode and an NTC thermistor used for protection. The thermistor helps protect the module from high temperatures by periodically providing a thermal balance so that it does not overheat.The module\'s basic working principle is simple. When the gate voltage is applied to the IGBT, electrons move through the channel, carrying a current across the junction region. This process is called the collector-emitter saturation. This flow of current through the device allows it to pass current through the load.The FS225R17KE3BOSA1 is a popular choice for many applications, due to its high performance and reliability. Its features offer high efficiency, low power losses, and superior thermal management, making it suitable for a wide variety of applications.The module\'s IGBT chip has a breakdown voltage of 1200V, a peak collector current of 225A, and an operational temperature of -40°C to 150°C. It also has a low gate drive requirements, with 2.5V. The thermal impedance is also improved, with a maximum junction temperature of 175°C.The FS225R17KE3BOSA1 module is ideal for applications that require high current, as well as high voltage. Its wide range of protection features make it a reliable and cost-effective solution for industrial motor controllers, Uninterruptible Power Supply units, and power converters.The module\'s robust design, high performance, and dependability make it a popular choice for many applications. Its wide temperature range, low gate drive requirements, and high current capacity make it an ideal choice for a variety of power systems.The specific data is subject to PDF, and the above content is for reference
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