Allicdata Part #: | FS25R12KE3GBOSA1-ND |
Manufacturer Part#: |
FS25R12KE3GBOSA1 |
Price: | $ 43.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR ECONO2-6 |
More Detail: | IGBT Module Full Bridge 1200V 40A 145W Chassis Mo... |
DataSheet: | FS25R12KE3GBOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 39.64340 |
Series: | EconoPACK™ 2 |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 40A |
Power - Max: | 145W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 25A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 1.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FS25R12KE3GBOSA1 is a fast switching, low VCE(sat) IGBT module, designed primarily for industrial motor drives and inverter applications. The device is manufactured using latest Insulated Gate Bipolar Transistor (IGBT) technology, with an emitter-controlled and optimised gate-charge design.
The design of the IGBT module provides improved switching performance and reduced losses, making it suitable for applications with higher input power levels. This device is a dual IGBT module with two independent IGBTs on a single substrate. The two IGBTs are isolated from each other, to reduce electrical interference and prevent arcing or shorting.
The IGBT module consists of a three-terminal, isolated, FET-based, insulated gate bipolar transistor (IGBT) and an integrated freewheeling diode configured in a dual-in-line package (DIP). An anti-parallel diode is integrated into the device and operates in sync with the main IGBT. This diode provides protection to the IGBT and prevents arcing or shorting, as it turns off in reverse bias condition.
The FS25R12KE3GBOSA1 has a maximum blocking voltage rating of 1200V, a maximum current rating of 25A and a maximum collector-emitter voltage of 400V. It is designed to operate over a wide range of current waveforms, including sinusoidal, trapezoidal, rectangular, sawtooth and pulse width modulation (PWM). The device is rated for use in a wide range of temperatures from -40 to +125 degrees Celsius.
The IGBT module is primarily used for motor drive and inverter applications. It can be used for direct current (DC)-to-alternating current (AC) conversion, AC-to-AC conversion, DC current control and other applications. Its primary benefit is its ability to quickly switch higher voltage, thus reducing power dissipation and increasing efficiency. It can also be used in applications requiring higher power levels, such as welding, and electric vehicle (EV) charging.
The FS25R12KE3GBOSA1 uses the principle of four-layer insulation and self-protection, which makes it a reliable and safe device. The four-layer insulation and self-protection feature help protect the circuit from external influences, such as excessive voltage or current. The IGBT module also features a low VCE(sat) rating, which helps to reduce power losses in motor drive and inverter applications. The device also features short circuit protection and over-temperature protection.
The FS25R12KE3GBOSA1 module has a wide range of applications due to its features, such as fast switching speed, low VCE(sat) rating, short circuit and over-temperature protection. It is mainly used for applications such as motor drives, inverters, DC current control, welding and EV charging. The device is also rated for a wide range of temperatures, making it suitable for use in a variety of environments.
The specific data is subject to PDF, and the above content is for reference
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