FS25R12W1T4BOMA1 Allicdata Electronics
Allicdata Part #:

FS25R12W1T4BOMA1-ND

Manufacturer Part#:

FS25R12W1T4BOMA1

Price: $ 26.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE 1200V 25A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FS25R12W1T4BOMA1 datasheetFS25R12W1T4BOMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 23.80770
10 +: $ 21.95740
Stock 1000Can Ship Immediately
$ 26.19
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Power - Max: 205W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 1.45nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FS25R12W1T4BOMA1 is a type of insulated-gate bipolar transistor (IGBT) module: a type of transistor which combines both bipolar and field-effect semiconductor technologies. It is specifically a “newly developed” IGBT module with a rated current of up to 25A and a maximum junction temperature of 175 degrees Celsius and a dielectric strength of 1.5kV for AC su and 2kV for DC su. This module also offers an impressive capability to reduce the switching loss by 50%, and an operating temperature range of -40 to +125. These features make the FS25R12W1T4BOMA1 an ideal choice for a variety of applications.

The FS25R12W1T4BOMA1 IGBT module is typically used in motor control applications such as induction motor drives, brushless DC motor drives, servo drives, and air conditioning systems. It is also often used in high voltage switching applications like power conversion and motor control, as well as high frequency applications such as RF and communication power supplies. Additionally, the device has been found to be useful in LED lighting, medical imaging and other medical applications.

In order to understand how the FS25R12W1T4BOMA1 functions and the benefit it provides, it is necessary to have an understanding of the underlying IGBT technology. IGBT technology combines both bipolar and field-effect semiconductor technologies to create a switching device that is both powerful and efficient. An IGBT is essentially an insulated-gate transistor with a bipolar structure, which makes it capable of handling high-current and high-voltage applications. An IGBT can switch rapidly between a high and low state, while consuming very little power in order to operate.

When an IGBT is turned ON, electrons are drawn into the base region due to the internal electric field. This creates a positive charge on the emitter terminal and a negative charge on the collector terminal, which puts the device in a conducting state. When the IGBT is turned OFF, the charge in the base region is eliminated, reversing the bias of the device and turning it off. The FS25R12W1T4BOMA1 IGBT module has several advantages over other switching components, such as the ability to rapidly switch between the common and complementary states with minimal power consumption, making it an ideal choice for many applications.

The FS25R12W1T4BOMA1 IGBT module is an important and useful device for a number of industrial and consumer applications. Its combination of high power and low power consumption makes it perfect for a variety of high voltage and high frequency applications, such as motor control, power conversion, LED lighting, and medical imaging. Its impressive ability to reduce switching losses also makes it a great choice for any application that requires fast switching and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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