FS30R06VE3BOMA1 Allicdata Electronics
Allicdata Part #:

FS30R06VE3BOMA1-ND

Manufacturer Part#:

FS30R06VE3BOMA1

Price: $ 14.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT LOW PWR EASY750-1
More Detail: IGBT Module Three Phase Inverter 600V 34A 88W Cha...
DataSheet: FS30R06VE3BOMA1 datasheetFS30R06VE3BOMA1 Datasheet/PDF
Quantity: 1000
40 +: $ 13.21120
Stock 1000Can Ship Immediately
$ 14.53
Specifications
Series: EasyPACK™
Part Status: Not For New Designs
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 34A
Power - Max: 88W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FS30R06VE3BOMA1 is an Insulated Gate Bipolar Transistor (IGBT) module, which is used in a variety of applications, ranging from telecoms to industrial processes. It is also used in applications where high speed switching is required, such as motor controllers and inverters. The module is made up of six discrete IGBT chips, connected together to form a single, powerful module.

This module has a gate-emitter voltage (VCE) of 600V and a collector-emitter voltage (VEB) of three volts. It can handle up to 30 Amperes of continuous current and can be switched up to a frequency of 50 Kilohms. The module also has various features, such as anti-parallel diode, current limitation, thermal overload protection and overvoltage protection.

The working principle of the FS30R06VE3BOMA1 is based on the principle of controlled conduction. This is where a voltage is applied to the base or gate of a transistor, allowing current to flow between the collector and emitter. The principle is the same for IGBTs, but the voltage applied is much higher, enabling the transistor to switch on and off at a much higher speed than a traditional bipolar junction transistor (BJT). This is ideal for motor controllers, inverters, and other electronic systems which require fast switching.

The FS30R06VE3BOMA1 is widely used in a variety of applications including motor control systems, industrial process control, heating and lighting control, medical imaging systems, and other power electronics applications. It is also used in a wide variety of telecommunication and data processing equipment, where its high switching speed is particularly useful.

The FS30R06VE3BOMA1 is a versatile and powerful IGBT module, which has a wide range of applications. Its wide voltage and current handling capabilities make it suitable for a variety of power electronics applications and its ability to switch rapidly makes it ideal for telecommunications and data processing systems. With its many features and its reliable performance, the FS30R06VE3BOMA1 is a great choice for any application requiring fast switching.

The specific data is subject to PDF, and the above content is for reference

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