| Allicdata Part #: | FS30R06W1E3BOMA1-ND |
| Manufacturer Part#: |
FS30R06W1E3BOMA1 |
| Price: | $ 21.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT MODULE 600V 30A |
| More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
| DataSheet: |  FS30R06W1E3BOMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 19.25910 |
| 10 +: | $ 17.76100 |
Specifications
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 60A |
| Power - Max: | 150W |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
| Current - Collector Cutoff (Max): | 1mA |
| Input Capacitance (Cies) @ Vce: | 1.65nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
Description
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The FS30R06W1E3BOMA1 is a high power integrated insulated gate bipolar transistor (IGBT) module. This type of device is a combination of an insulated gate field-effect transistor (IGFET) and a bipolar transistor. This article will discuss the application field and working principle of the FS30R06W1E3BOMA1.The FS30R06W1E3BOMA1 is used in a variety of industrial, commercial, and consumer applications. This type of module is often used in motor control systems to provide high power and reliable switching. It is also used in power converters, space vector supplies, and welding applications. The FS30R06W1E3BOMA1 is composed of an IGBT and a freewheeling diode, which are connected in series. The IGBT is the switching component, and the diode is used to protect the IGBT from reverse current. The IGBT has an insulated gate on the gate pin, which is used to control the voltage and current to the device. When the gate voltage is in a low state, the current to the device is reduced, and when it is in a high state, the current to the device is increased. The working principle of the FS30R06W1E3BOMA1 is based on the operation of the IGBT, which works by allowing current to flow through the base when a certain voltage is applied to the gate. This voltage is then used to control the current to the device, allowing it to switch on and off accordingly. The IGBT also has a buffer layer that helps to protect the device from over-voltage conditions by limiting the amount of current passing through the device. In order to control the current to the FS30R06W1E3BOMA1, an external circuit must be designed. This circuit can be used to set the voltage and current to the device, allowing it to be controlled as needed. The external circuit must also be designed to be compatible with the IGBT protection layer in order to ensure that the device does not become damaged by any over-voltage conditions. In conclusion, the FS30R06W1E3BOMA1 is a high power, reliable IGBT module that is used in a variety of applications. The device is composed of an IGBT and a freewheeling diode, which are connected in series. The IGBT works by allowing current to flow through the device when the gate is in a high state, and the diode is used to protect the device from reverse current. The external circuit must be designed in order to control the voltage and current of the device, and the protection layer must be compatible with the external circuit in order to ensure its protection against over-voltage conditions.
The specific data is subject to PDF, and the above content is for reference
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