FS35R12KE3GBOSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FS35R12KE3GBOSA1 is a type of Insulated Gate Bipolar Transistor (IGBT) module. IGBTs are a type of electronic component found in power electronics. An IGBT module is used to control the power that flows through a piece of equipment. The FS35R12KE3GBOSA1 is especially suited for high-power switching applications.

An IGBT module consists of multiple Insulated Gate Bipolar Transistors (IGBTs) which are connected in parallel. The parallel connection allows the IGBT module to handle higher power levels than a single IGBT can provide. In addition, the IGBT module provides additional protection against short circuits, ensuring a more reliable operation.

The FS35R12KE3GBOSA1 IGBT module includes four IGBTs connected in parallel. Each of the IGBTs has a rating of 1200 volts with a current capacity of 400 amps. This makes the FS35R12KE3GBOSA1 suitable for high voltage and high current applications. Additionally, the IGBT module has a maximum switching frequency of 200 kHz.

The FS35R12KE3GBOSA1 can be used in a wide variety of applications. It is commonly used in motor drives, high frequency power inverters, power supplies, and industrial controls. It is especially useful for applications that require high switching speed, high switching current, or high voltage loads.

The working principle of the FS35R12KE3GBOSA1 is based on the same principle as all IGBTs. An IGBT is a type of transistor that can rapidly switch between a “low voltage-high current” state and a “high voltage-low current” state. In the low voltage-high current state, the IGBT allows current to flow through it and the transistor is said to be “on”. In the high voltage-low current state, the IGBT prevents current from flowing and the transistor is said to be “off”.

To control the switching of the IGBT, a voltage is applied to the gate of the transistor. This voltage known as the gate control voltage is typically provided by an external controller. When the gate control voltage is applied to the gate of the IGBT, the IGBT turns “on” allowing current to flow through the transistor. When the gate control voltage is removed, the IGBT turns “off” and prevents current from flowing through the transistor.

The FS35R12KE3GBOSA1 IGBT module provides an effective and efficient way to control the power that flows through an electronic device. By connecting multiple IGBTs in parallel, the FS35R12KE3GBOSA1 is able to handle higher voltage and current levels while providing additional protection against short circuits. The FS35R12KE3GBOSA1 is an ideal choice for applications that require high switching speed, high current, or high voltage loads.

The specific data is subject to PDF, and the above content is for reference