Allicdata Part #: | FS35R12W1T4B11BOMA1-ND |
Manufacturer Part#: |
FS35R12W1T4B11BOMA1 |
Price: | $ 26.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR EASY1B-2 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS35R12W1T4B11BOMA1 Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 24.36520 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 65A |
Power - Max: | 225W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 35A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 2nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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.The FS35R12W1T4B11BOMA1 Application Field and Working Principle is a powerful semiconductor device used for managing large amounts of current. The FS35R12W1T4B11BOMA1 is an insulated gate bipolar transistor (IGBT) module, which is specially designed for high-frequency and off-line applications. Thus, it is the go-to choice when it comes to power conversion, control, and switching. This article will focus on the application field and working principle of the FS35R12W1T4B11BOMA1.
The FS35R12W1T4B11BOMA1 is an ideal choice for switching heavy electric power in high-frequency applications due to its unparalleled performance, durability, and efficiency. The IGBT module is used in a myriad of industries, including telecommunication, solar and wind power, medical equipment, machine tools, frequency conversion and other industrial applications. The module also offers low-power consumption and low-losses when compared to traditional systems, making it an attractive choice for many types of industries.
Let us take a look at the working principle and structure of the FS35R12W1T4B11BOMA1. The device consists of four main components: a main N-channel IGBT, a main P-channel IGBT, a driver circuit, and an insulated gate driver circuit. The main N-channel IGBT controls the voltage, while the main P-channel IGBT controls the current. The insulated gate driver circuit is responsible for the appropriate operation of the main N-channel and P-channel IGBTs. It supplies the appropriate signals to these two main components. The main N-channel IGBT has the highest draining rate, while the P-channel IGBT has the lowest draining rate.
In terms of actual usage, the FS35R12W1T4B11BOMA1 is a versatile device for switching numerous types of electrical circuits. The three main advantages of the device are its high current carrying capacity, low on-state losses, and lower switching losses when compared to other devices. It is also capable of operating at high switching frequencies up to 50kHz. Additionally, the module provides numerous safety features by preventing overvoltage, over-current and over-temperature conditions.
The FS35R12W1T4B11BOMA1 is widely used in a variety of demanding applications such as uninterruptible power supplies, automotive drives, traction systems and motor drives. Furthermore, the device is also suitable for different medium and high-voltage applications like motor drives, renewable energy systems and inverter units. Thanks to its unique features, the FS35R12W1T4B11BOMA1 is the preferred choice for various integrated power supplies, industrial motor drives, and renewable energy systems.
We have discussed the applications and working principle of the FS35R12W1T4B11BOMA1. This powerful IGBT module offers exceptional performance and efficiency, making it an ideal choice for high-frequency applications. With its superior current carrying capacity and low losses, the FS35R12W1T4B11BOMA1 is well-suited to industries ranging from telecommunication to renewable energy. The module also offers numerous safety features to protect the system from overvoltage, over-current and over-temperature conditions.
The specific data is subject to PDF, and the above content is for reference
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