FSB660

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The FSB660 is a single in-line, NPN, silicon planar epitaxial transistor designed for general purpose amplifier and switching applications. The FSB660 features a low collector-emitter saturation voltage, fast switching time, and high collector to emitter breakdown voltage. It is ideal for applications where power-saving and high-speed switching are desired.

The transistor’s base-emitter junction is constructed using a silicon planar process and incorporates an internal structure that boosts the voltage gain. The FSB660 has an internal resistance of up to 0.7 ohms from its collector to its emitter, allowing for fast switching of signals. Due to its low saturation voltage, it is capable of providing high output current with minimal voltage drop. Furthermore, the FSB660’s large internal breakdown voltage (between 35v and 40v) allows it to support high voltage applications with minimal power losses.

The FSB660 is available in two different packages: the TO-92 and SOT-23 packages. The SOT-23 package is the smallest and most space efficient package, making it ideal for use in compact applications where space is limited. The TO-92 package is the most common, and typically used in applications that require easier access to the terminal pins.

The FSB660’s working principle is similar to other NPN transistors. The device works by using an input current at its base terminal, which causes the collector and emitter to move together. This is known as an “emitter follower topology”, and it produces an output voltage that is approximately equal to the input voltage. This is why the FSB660 is widely used in amplifier and switching applications.

When it comes to applications, the FSB660 can be used in various electronic circuits, including audio amplifiers, voltage regulators, DC-DC converters, and AC switching. The low saturation voltage of the transistors means they can be used to switch signal and power levels while minimising voltage drop. Additionally, its fast switching time allows it to be used in high-speed switching applications, such as digital logic circuits.

In conclusion, the FSB660 is an ideal transistor for general purpose amplifier and switching applications that require low voltage drop, fast switching time, and high breakdown voltage. It comes in both TO-92 and SOT-23 packages, making it suitable for a variety of applications with different space requirements. Furthermore, its working principle and applications make it a popular choice for use in electronic circuits.

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