Allicdata Part #: | FSB749TR-ND |
Manufacturer Part#: |
FSB749 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 3A SSOT3 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 3A 100MHz 500mW S... |
DataSheet: | FSB749 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SuperSOT-3 |
Base Part Number: | FSB749 |
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The FSB749 is an NPN silicon planar transistor that is commonly used in digital and linear applications. It is a single bipolar (BJT) transistor typically employed in a wide range of digital applications, from small scale switching to high current industrial and military circuits. By leveraging its features, the FSB749 provides circuits with excellent technical performance and reliable operation.
The FSB749 is an NPN bipolar transistor available in an 8 pin plastic package with lead (Pb) or lead-free (Pb-free) plating finishes. It is based on a silicon epitaxial planar process, featuring small size and low power consumption. It has an operating temperature range of -55°C to +150°C, making it suitable for most applications. Its maximum DC collector current is 400mA and its maximum voltage rating is 50V. Its maximum junction temperature is 150°C. It has low total capacitance (compared to other transistors), fast switching speeds and high gain-to-input capacitance ratio.
The FSB749 is a single bipolar transistor used for power amplifier and signal amplifier stages. It is suitable for amplification of low frequency signals, such as audio signals and communications signals. It can also be used in power regulator switches, power supply and linear applications, providing low voltage drop, low noise operation and fast switching.
The FSB749 works by employing the concept of recombination. When electrons in the N-type region are attracted to the positive bias on the base electrode, they are deposited onto the emitter, forming a current that flows through the emitter and collector leads, causing a voltage increase at the collector. This process reduces the resistance of the transistor and allows it to amplify signals and control the current flow in circuits.
The FSB749 can also be employed in power switch applications, such as on-off switches and position sensors. In these applications, the FSB749 can be used to quickly turn on or off power, or to provide accurate position feedback.
The FSB749 is versatile and can be employed in a wide range of digital and linear applications. Its fast switching speed, small size and low power consumption make it suitable for any application that requires fast switching and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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