Allicdata Part #: | FSBB20CH120D-ND |
Manufacturer Part#: |
FSBB20CH120D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IPM 1.2KV 20A 27-POWERDIP |
More Detail: | Power Driver Module IGBT 3 Phase Inverter 1.2kV 20... |
DataSheet: | FSBB20CH120D Datasheet/PDF |
Quantity: | 1000 |
Series: | Motion SPM® 3 |
Part Status: | Active |
Type: | IGBT |
Configuration: | 3 Phase Inverter |
Current: | 20A |
Voltage: | 1.2kV |
Voltage - Isolation: | 2500Vrms |
Package / Case: | 27-PowerDIP Module (1.205", 30.60mm) |
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Power Driver Modules (PDMs) are electrical components used to provide controllable switching and signal isolations for many applications, including industrial and automotive, between power sources and signal sources. FSBB20CH120D is one type of Power Driver Modules that is becoming increasingly popular due to its cost-effectiveness and robustness. This article will discuss its application field, working principle and key features.
Application Field
The FSBB20CH120D is an N-Channel MOSFETs Driver module. It is suitable for a wide range of applications such as switching power supplies, motor drivers, and power supplies. It is a high-efficiency, low-on-time driver module that is suitable for use in low power applications, such as those in the automotive industry. In addition, it is also ideal for industrial applications such as machine control, and is robust, with a high immunity to EMI/RFI noise. The on-state resistance of the FBSB20CH120D is typically 17mOhms.
Working Principle
The working principle of the FBSB20CH120D is based on N-Channel MOSFETs, commonly referred to as “channel MOSFETs”. The channels use electrons for conduction, which is enabled with a signal, referred to as the gate signal. This gate signal will turn the switch “on”, allowing for the conduction of electrons. The FBSB20CH120D uses this principle to control the switching of power sources and signal sources.When the power source is connected to the gate signal, the gate signal will be transferred through the FBSB20CH120D, causing the channel MOSFET to turn “on”, and transferring the power source to the signal source. When the gate signal is turned “off”, the channel MOSFET will turn “off”, preventing the flow of electrons through the FBSB20CH120D and breaking the connection between the power source and signal source.The channel MOSFET of the FBSB20CH120D will stay “on” until the power source is removed or the gate signal is removed. The channel MOSFET will then default to “off”, preventing any further conduction between the power source and signal source.
Key Features
The FSBB20CH120D offers a range of features, making it a popular choice for many applications:
- High efficiency: The FBSB20CH120D can provide efficient power cycling and signal isolation due to its robust design.
- Low on-time: The FBSB20CH120D has a low on-time compared to other PDMs, making it a suitable choice for low power applications.
- Noise immunity: The FBSB20CH120D is designed to be highly immune to EMI/RFI noise.
- Low on-state resistance: The FBSB20CH120D typically has an on-state resistance of 17mOhms, making it suitable for use in low power applications.
In summary, the FSBB20CH120D is an N-Channel MOSFETs Driver module. It is preferred due to its low on-time, high efficiency, noise immunity, and low on-state resistance. The FSBB20CH120D is suitable for a wide range of applications, such as switching power supplies, motor drivers, control systems, and more, making it a preferred choice among many users.
The specific data is subject to PDF, and the above content is for reference
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