FSBB20CH60F Allicdata Electronics
Allicdata Part #:

FSBB20CH60F-ND

Manufacturer Part#:

FSBB20CH60F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IC SMART POWER MOD 20A SPM27-CA
More Detail: Power Driver Module IGBT 3 Phase 600V 20A 27-Power...
DataSheet: FSBB20CH60F datasheetFSBB20CH60F Datasheet/PDF
Quantity: 35
Stock 35Can Ship Immediately
Specifications
Series: Motion SPM® 3
Part Status: Not For New Designs
Type: IGBT
Configuration: 3 Phase
Current: 20A
Voltage: 600V
Voltage - Isolation: 2500Vrms
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Base Part Number: FSBB20CH60
Description

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FSBB20CH60F Power Driver Modules Application Field and Working Principles
Filed-Stop IGBT Power Driver Module FSBB20CH60F has a gate+ emitter drive configuration, allowing half-bridge or three-phase topologies with up-to 6 channels. It is a good choice to meet the requirements of high power density and high conversion efficiency applications.

FSBB20CH60F can achieve high frequency switching performance by using a dedicated gate driver, which supports a wide range of operating conditions. The fault monitoring circuit and topology are designed to enable the reverse current to flow through the IGBT. The output enables high-speed pulse current regulation and short circuit protection.

The Power Driver Module FSBB20CH60F features an integrated FET gate driver, an input/output Opto-Isolator Interface (OIFI), and a complete solution for Power Module control with wide voltage range and high frequency switching performance. Its output stage is capable of supplying up to 6A of pulse current at up to 10kHz operation. The power driver module is designed for high power applications such as logic gates, LED lighting, audio amplifiers, and switching power supplies.

The power driver module is compatible with both low-power and high-power applications, enabling different topologies to be used. It consists of a bipolar inverter and a power MOSFET in its input stage. The bipolar inverter provides the required protection against reverse current while the power MOSFET provides the required high current level during active switch mode operation. Its FET gate driver section consists of two FETs, which are connected in parallel to provide high drive current for driving an external FET. The Opto-Isolator Interface (OIFI) is used for isolation and protection of the logic signals.

The working principle of the Power Driver Module FSBB20CH60F is based upon the principles of field-stop. The field-stop allows the gate-emitter voltage to be stepped up, so that a current can be safely and efficiently switched on or switched off. The voltage is stepped up through a combination of the external gate voltage and the voltage generated by the bipolar inverter. The combination of these voltages generates the required gate-emitter voltage. The gate-emitter voltage is then supplied to the IGBT gate terminal to enable ON/OFF switching of the current.

In conclusion, the Power Driver Module FSBB20CH60F is an ideal solution for high power applications due to its high switching frequency, wide voltage range, and high pulse current output capabilities. Its field-stop technology allows for efficient current switching and its integrated Opto-Isolator Interface enables the power driver module to be easily used for logic circuits and high power applications. The power driver module\'s integration of FET gate driver, bipolar inverter and Opto-Isolator Interface makes it an excellent choice for all kinds of power control projects.

The specific data is subject to PDF, and the above content is for reference

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